2SD1816S-E

Mfr. #:: 2SD1816S-E
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT BIP NPN 4A 100V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SD1816S-E 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 100 V

이미터-베이스 전압 VEBO:: 6 V

최대 DC 수집기 전류:: 4 A

이득 대역폭 곱 fT:: 130 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: 2SD1816

키:: 2.3 mm

포장:: 대부분

너비:: 6.5 mm

상표:: 온세미컨덕터

Pd - 전력 손실:: 20 W

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 500

하위 카테고리:: 트랜지스터

Tags: 2SD1816S, 2SD1816, 2SD181, 2SD18, 2SD1, 2SD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SD1816S-E 설명

***emi: Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251

***ical: Trans GP BJT NPN 100V 4A 1000mW 3-Pin(3+Tab) TP Bag

***ure Electronics: Bipolar Transistors - BJT BIP NPN 3A 100V

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN

***ical: Trans GP BJT NPN 100V 3A 1000mW 3-Pin(3+Tab) TP Bag

***nell: TRANSISTOR, BIPOLAR, NPN, 100V, 3A-TO251;

***-Wing Technology: Bulk Through Hole NPN Single Bipolar (BJT) Transistor 70 @ 500mA 5V 3A 1W 130MHz

***emi: Bipolar Transistor, 100V, 3A, Low VCE(sat), NPN Single, TP/TP-FA

***r Electronics: Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN

***et: Trans GP BJT PNP 100V 3A 3-Pin(3+Tab) TP T/R

***-Wing Technology: Bulk Through Hole NPN SINGLE Bipolar (BJT) Transistor 200 @ 500mA 5V 1muA ICBO 1W 180MHz

***emi: Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

***r Electronics: Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251

***ical: Trans GP BJT NPN 100V 4A 1000mW 3-Pin(3+Tab) TP Bag

*** Electronics: Bipolar Transistors - BJT BIP NPN 4A 100V

Market price

부분 #	제조	설명	재고	가격
2SD1816S-E DISTI # V99:2348_07310488	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	85	2500:$0.3178 1000:$0.3580 100:$0.4350 10:$0.6743 1:$0.7819
2SD1816S-E DISTI # V36:1790_07310488	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	0
2SD1816S-E DISTI # 2SD1816S-E-ND	ON Semiconductor	TRANS NPN 100V 4A TP RoHS: Compliant Min Qty: 1 Container: Bulk	900In Stock	1000:$0.3943 500:$0.4929 100:$0.6235 10:$0.8130 1:$0.9200
2SD1816S-E DISTI # 25863597	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag RoHS: Compliant	85	2500:$0.3416 1000:$0.3849 100:$0.4676 20:$0.6590
2SD1816S-E DISTI # 2SD1816S-E	ON Semiconductor	Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TP Bag - Bulk (Alt: 2SD1816S-E) RoHS: Compliant Min Qty: 1500 Container: Bulk	Americas - 0	15000:$0.2889 7500:$0.2969 4500:$0.2999 3000:$0.3039 1500:$0.3059
2SD1816S-E DISTI # 65T2530	ON Semiconductor	BIP NPN 4A 100V / BLKBG	0	2500:$0.3380 1000:$0.3470 500:$0.4720 250:$0.4860 100:$0.5000 25:$0.7370 10:$0.7580 1:$0.9690
2SD1816S-E DISTI # 863-2SD1816S-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 4A 100V RoHS: Compliant	223	1:$0.8800 10:$0.7280 100:$0.4700 1000:$0.3760 2500:$0.3170 10000:$0.3060 25000:$0.2940

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