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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI2309DS-T1-GE3 DISTI # 15R4907 | Vishay Intertechnologies | P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):275mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI2309DS-T1-GE3 DISTI # 84R8025 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.25A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.275ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:1.25W RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI2309DS-T1-E3 DISTI # 70026067 | Vishay Siliconix | MOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W RoHS: Compliant | 0 |
|
| SI2309DS-T1 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 1401 |
|
| SI2309DS-T1 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.00125A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236 | 1581 |
|
| SI2309DST1 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Not Compliant | Europe - 2505 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI2309DS , M1MA151KT2 OMO.#: OMO-SI2309DS-M1MA151KT2-1190 |
신규 및 오리지널 |