GTVA126001EC-V1-R0

Mfr. #:: GTVA126001EC-V1-R0
제조사:: N/A
설명:: RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 600W
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: GTVA126001EC-V1-R0 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: GTVA126001EC-V1-R0 추가 정보

제품 속성
속성 값

제조사:: 주식회사 크리

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 18 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 150 V

Vgs - 게이트 소스 항복 전압:: - 10 V to 2 V

Id - 연속 드레인 전류:: 10 A

출력 파워:: 600 W

최대 드레인 게이트 전압:: -

장착 스타일:: 나사산

패키지/케이스:: H-36248-2

포장:: 릴

동작 주파수:: 1.2 GHz to 1.4 GHz

상표:: 울프스피드 / 크리어

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

Vgs th - 게이트 소스 임계 전압:: - 3 V

Tags: GTVA1, GTVA, GTV

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GTVA126001EC-V1-R0 추가 정보

GTVA High Power RF GaN on SiC HEMT: Wolfspeed / Cree GTVA High Power RF GaN on SiC HEMT are 50V High Electron Mobility Transistors (HEMT) based on Gallium-Nitride on Silicon Carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These Pulsed/CW (Continuous Wave) devices have a pulse width of 128µs and a duty cycle of 10%.

GTVA126001EC-V1-R0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes