IKW50N65WR5XKSA1

Mfr. #:: IKW50N65WR5XKSA1
제조사:: Infineon Technologies
설명:: IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/perform
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IKW50N65WR5XKSA1 데이터 시트
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ECAD Model:
추가 정보:: IKW50N65WR5XKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.4 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 80 A

Pd - 전력 손실:: 282 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

시리즈:: TRENCHSTOP 5 WR5

포장:: 튜브

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 240

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IKW50N65WR5 SP001215522

Tags: IKW50N65, IKW50N6, IKW50N, IKW5, IKW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW50N65WR5XKSA1 설명

***ical: Trans IGBT Chip N-CH 650V 80A 282000mW 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: The reverse conducting TRENCHSTOP™ 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application, PG-TO247-3, RoHS

***ineon: The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

***ure Electronics: IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar

***ark: Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,W DIODE,650V,80A,TO247AB; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:650V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:650V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

***ical: Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube

***ark: 650V FIELD STOP TRENCH IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

***ure Electronics: FGH40T65UPD Series 650 V 40 A Field Stop Trench IGBT - TO-247-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.

IKW50N65WR5XKSA1 추가 정보

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 WR5 Reverse Conducting IGBTs: Infineon TRENCHSTOP™ 5 WR5 Reverse Conducting IGBTs are a special reverse conducting IGBT family optimized for full rated hard switching turn off typically found in Welding inverter applications. These IGBTs offer good performance at an attractive price. The WR5 IGBTs have an excellent price to performance ratio and are recommended for use in AC-DC PFC stage in welding, UPS, and solar.

Market price

부분 #	제조	설명	재고	가격
IKW50N65WR5XKSA1 DISTI # 30709777	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A Tube	480	500:$3.0492 250:$3.3957 240:$3.5739
IKW50N65WR5XKSA1 DISTI # IKW50N65WR5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 80A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	195In Stock	2640:$2.5976 720:$3.2340 240:$3.7989 25:$4.3832 10:$4.6370 1:$5.1600
IKW50N65WR5XKSA1 DISTI # IKW50N65WR5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65WR5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$2.2900 960:$2.3900 1440:$2.3900 480:$2.4900 240:$2.5900
IKW50N65WR5XKSA1 DISTI # SP001215522	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001215522) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	500:€1.9900 1000:€1.9900 50:€2.0900 100:€2.0900 10:€2.1900 25:€2.1900 1:€2.2900
IKW50N65WR5XKSA1 DISTI # 726-IKW50N65WR5XKSA1	Infineon Technologies AG	IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno	346	1:$4.9100 10:$4.1700 100:$3.6100 250:$3.4300 500:$3.0800
IKW50N65WR5XKSA1 DISTI # 1441185	Infineon Technologies AG	IGBT 650V 50A TRENCHSTOP W/DIODE TO-247, TU	690	90:£1.7300 30:£1.8360

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IKW50N65WR5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes