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MR4A16BMA35R

MR4A16BMA35R
Mfr. #:
MR4A16BMA35R
제조사:
Everspin Technologies
설명:
NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MR4A16BMA35R 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
MR4A16BMA35R 추가 정보
제품 속성
속성 값
제조사:
에버스핀 테크놀로지스
제품 카테고리:
NVRAM
RoHS:
Y
패키지/케이스:
BGA-48
인터페이스 유형:
평행 한
메모리 크기:
16 Mbit
조직:
1 M x 16
데이터 버스 폭:
16 bit
액세스 시간:
35 ns
공급 전압 - 최대:
3.6 V
공급 전압 - 최소:
3 V
작동 공급 전류:
110 mA
최소 작동 온도:
0 C
최대 작동 온도:
+ 70 C
시리즈:
MR4A16B
포장:
릴
상표:
에버스핀 테크놀로지스
장착 스타일:
SMD/SMT
습기에 민감한:
네
상품 유형:
NVRAM
공장 팩 수량:
2500
하위 카테고리:
메모리 및 데이터 저장
Tags
MR4A16B, MR4A1, MR4A, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RAM 16M PARALLEL 48FBGA
MR4A08B / MR4A16B 16Mb Parallel MRAMs
Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
부분 # 제조 설명 재고 가격
MR4A16BMA35R
DISTI # MR4A16BMA35R-ND		Everspin TechnologiesIC RAM 16M PARALLEL 48FBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$24.0996
MR4A16BMA35
DISTI # 936-MR4A16BMA35		Everspin TechnologiesNVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
RoHS: Compliant		253
  • 1:$31.5400
  • 5:$30.6100
  • 10:$29.3700
  • 25:$29.0500
  • 50:$28.3300
  • 100:$24.8700
  • 250:$24.0300
MR4A16BMA35R
DISTI # 936-MR4A16BMA35R		Everspin TechnologiesNVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
RoHS: Compliant		0
    영상 부분 # 설명
    MR4A16BCYS35

    Mfr.#: MR4A16BCYS35

    OMO.#: OMO-MR4A16BCYS35

    		 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BCMA35

    Mfr.#: MR4A16BCMA35

    OMO.#: OMO-MR4A16BCMA35

    		 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BMA35

    Mfr.#: MR4A16BMA35

    OMO.#: OMO-MR4A16BMA35

    		 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BYS35R

    Mfr.#: MR4A16BYS35R

    OMO.#: OMO-MR4A16BYS35R

    		 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BUYS45R

    Mfr.#: MR4A16BUYS45R

    OMO.#: OMO-MR4A16BUYS45R

    		 NVRAM 16Mb 3.3V 45ns 1Mx16 Parallel MRAM
    MR4A16BYS35

    Mfr.#: MR4A16BYS35

    OMO.#: OMO-MR4A16BYS35

    		 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BYS35

    Mfr.#: MR4A16BYS35

    OMO.#: OMO-MR4A16BYS35-EVERSPIN-TECHNOLOGIES

    		 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BCYS35R

    Mfr.#: MR4A16BCYS35R

    OMO.#: OMO-MR4A16BCYS35R-EVERSPIN-TECHNOLOGIES

    		 NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    MR4A16BCMA35

    Mfr.#: MR4A16BCMA35

    OMO.#: OMO-MR4A16BCMA35-EVERSPIN-TECHNOLOGIES

    		 IC RAM 16M PARALLEL 48FBGA
    MR4A16AVMA35

    Mfr.#: MR4A16AVMA35

    OMO.#: OMO-MR4A16AVMA35-1190

    		 신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    MR4A16BMA35R의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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