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IRFB812PBF

IRFB812PBF
Mfr. #:
IRFB812PBF
제조사:
Infineon / IR
설명:
MOSFET Gen 10.7 FredFet 500V 1.5Ohm
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFB812PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB812PBF DatasheetIRFB812PBF Datasheet (P4-P6)IRFB812PBF Datasheet (P7-P8)
ECAD Model:
추가 정보:
IRFB812PBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
500 V
Id - 연속 드레인 전류:
3.6 A
Rds On - 드레인 소스 저항:
1.75 Ohms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
13.3 nC
Pd - 전력 손실:
78 W
구성:
하나의
포장:
튜브
키:
15.65 mm
길이:
10 mm
트랜지스터 유형:
1 N-Channel
너비:
4.4 mm
상표:
인피니언 / IR
상품 유형:
MOSFET
공장 팩 수량:
1000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001563948
단위 무게:
0.211644 oz
Tags
IRFB8, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 500 V 2.2 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***et
Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CH, 500V, 3.6A,TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.75ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3
MotIRFET™ HEXFET® Power MOSFETs
Infineon MotIRFET™ HEXFET® MOSFETs offer a fast body diode to eliminate the need for external diodes in ZVS applications. They also have a lower gate charge which results in simpler drive requirements and a higher gate voltage threshold that offers improved noise immunity. These devices are rated at 500 V (VDSS) and continuous current (ID) of 3.6A or 6.0A. Typical applications for these MOSFETs include zero voltage switching (ZVS) SMPS, uninterruptible power supplies (UPS), and motor control applications.Learn More
부분 # 제조 설명 재고 가격
IRFB812PBF
DISTI # IRFB812PBF-ND		Infineon Technologies AGMOSFET N CH 500V 3.6A TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.4725
IRFB812PBF
DISTI # IRFB812PBF		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB812PBF)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 20000:$0.3039
  • 10000:$0.3099
  • 6000:$0.3209
  • 4000:$0.3329
  • 2000:$0.3449
IRFB812PBF
DISTI # IRFB812PBF		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB812PBF)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 20000:$0.3039
  • 10000:$0.3099
  • 6000:$0.3209
  • 4000:$0.3329
  • 2000:$0.3449
IRFB812PBF
DISTI # IRFB812PBF		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: IRFB812PBF)
Min Qty: 1000
Container: Bulk		Americas - 0
  • 10000:$0.3809
  • 5000:$0.3889
  • 3000:$0.4039
  • 2000:$0.4199
  • 1000:$0.4369
IRFB812PBF
DISTI # SP001563948		Infineon Technologies AGTrans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001563948)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 0
  • 500:€0.3209
  • 300:€0.3459
  • 200:€0.3749
  • 100:€0.4089
  • 50:€0.4999
IRFB812PBF
DISTI # 70411595		Infineon Technologies AGIRFB812PBF N-channel MOSFET Transistor,3.6 A,500 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 5:$0.7400
IRFB812PBF
DISTI # 942-IRFB812PBF		Infineon Technologies AGMOSFET Gen 10.7 FredFet 500V 1.5Ohm
RoHS: Compliant		1110
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6460
  • 500:$0.5710
  • 1000:$0.4500
IRFB812PBFInternational RectifierPower Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		600
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
IRFB812PBF
DISTI # 7481939		Infineon Technologies AGMOSFET N-CH 500V 3.6A HEXFET TO220AB, PK1100
  • 125:£0.2900
  • 5:£0.2980
IRFB812PBFInternational Rectifier 
RoHS: Compliant		1700
    IRFB812PBF
    DISTI # IRFB812PBF    		Infineon Technologies AGN-Ch 500V 3,6A 78W 2,2R TO220AB
    RoHS: Compliant    		270
    • 10:€0.6030
    • 50:€0.3630
    • 200:€0.3030
    • 500:€0.2920
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    ATSAM4SA16BB-AN

    Mfr.#: ATSAM4SA16BB-AN

    OMO.#: OMO-ATSAM4SA16BB-AN-MICROCHIP-TECHNOLOGY

    		 64LQFP,GREEN,EXT TEMP(105C),MR
    LM324N

    Mfr.#: LM324N

    OMO.#: OMO-LM324N-TEXAS-INSTRUMENTS

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    유효성
    재고:
    Available
    주문 시:
    1984
    수량 입력:
    IRFB812PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.99
    US$0.99
    10
    US$0.84
    US$8.40
    100
    US$0.65
    US$64.60
    500
    US$0.57
    US$285.50
    1000
    US$0.45
    US$450.00
    시작
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