SSM2212CPZ-R7

SSM2212CPZ-R7
Mfr. #:
SSM2212CPZ-R7
제조사:
Analog Devices Inc.
설명:
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SSM2212CPZ-R7 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM2212CPZ-R7 DatasheetSSM2212CPZ-R7 Datasheet (P4-P6)SSM2212CPZ-R7 Datasheet (P7-P9)SSM2212CPZ-R7 Datasheet (P10-P12)SSM2212CPZ-R7 Datasheet (P13)
ECAD Model:
추가 정보:
SSM2212CPZ-R7 추가 정보 SSM2212CPZ-R7 Product Details
제품 속성
속성 값
제조사:
아나로그디바이스
제품 카테고리:
양극성 트랜지스터 - BJT
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
LFCSP-16
트랜지스터 극성:
NPN
구성:
듀얼
컬렉터-이미터 전압 VCEO 최대:
40 V
컬렉터-베이스 전압 VCBO:
40 V
수집기-이미터 포화 전압:
50 mV
최대 DC 수집기 전류:
20 mA
이득 대역폭 곱 fT:
200 MHz
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
시리즈:
SSM2212
DC 전류 이득 hFE 최대:
2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V
포장:
상표:
아나로그디바이스
DC 수집기/기본 이득 hfe 최소:
300 at 1 mA, 15 V, 300 at 1 mA, 15 V
습기에 민감한:
상품 유형:
BJT - 양극성 트랜지스터
공장 팩 수량:
1500
하위 카테고리:
트랜지스터
Tags
SSM2212C, SSM2212, SSM221, SSM22, SSM2, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP EP T/R
***ark
Low Noise Matched Dual NPN Transistor, REEL7
***et Europe
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP T/R
***ponent Sense
IC SMD LOW-NOISE FOR AUDIO DUAL MATCHED
***i-Key
TRANS 2NPN 40V 0.02A 16WLCSP
***hardson RFPD
RF POWER TRANSISTOR
***log Devices
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high- order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.
SSM2212 Dual-Matched NPN Transistor
Analog Devices SSM2212 features a dual, NPN-matched transistor pair specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.Learn More
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유효성
재고:
Available
주문 시:
1987
수량 입력:
SSM2212CPZ-R7의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$6.73
US$6.73
10
US$6.06
US$60.60
25
US$5.70
US$142.50
50
US$5.36
US$268.00
100
US$5.09
US$509.00
250
US$4.78
US$1 195.00
500
US$4.34
US$2 170.00
1000
US$3.72
US$3 720.00
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