IPW60R041P6FKSA1

IPW60R041P6FKSA1
Mfr. #:
IPW60R041P6FKSA1
제조사:
Infineon Technologies
설명:
MOSFET HIGH POWER PRICE/PERFORM
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW60R041P6FKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPW60R041P6FKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
77.5 A
Rds On - 드레인 소스 저항:
37 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
170 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
481 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
21.1 mm
길이:
16.13 mm
시리즈:
CoolMOS P6
트랜지스터 유형:
1 N-Channel
너비:
5.21 mm
상표:
인피니언 테크놀로지스
가을 시간:
5 ns
상품 유형:
MOSFET
상승 시간:
27 ns
공장 팩 수량:
240
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
90 ns
일반적인 켜기 지연 시간:
29 ns
부품 번호 별칭:
IPW60R041P6 SP001091630
단위 무게:
1.340411 oz
Tags
IPW60R041P, IPW60R041, IPW60R04, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3
***ark
Mosfet, N-Ch, 600V, 77.5A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:77.5A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.037Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPW60R041P6FKSA1
DISTI # IPW60R041P6FKSA1-5-ND
Infineon Technologies AGMOSFET N-CH 600V 77.5A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 240:$9.8714
  • 10:$12.0060
  • 1:$13.3400
IPW60R041P6FKSA1
DISTI # IPW60R041P6FKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 77.5A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R041P6FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$6.8900
  • 480:$6.6900
  • 960:$6.3900
  • 1440:$6.1900
  • 2400:$6.0900
IPW60R041P6FKSA1
DISTI # SP001091630
Infineon Technologies AGTrans MOSFET N-CH 650V 77.5A 3-Pin TO-247 Tube (Alt: SP001091630)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€7.2900
  • 10:€6.6900
  • 25:€6.3900
  • 50:€6.1900
  • 100:€5.8900
  • 500:€5.6900
  • 1000:€5.2900
IPW60R041P6FKSA1
DISTI # IPW60R041P6
Infineon Technologies AGTrans MOSFET N-CH 650V 77.5A 3-Pin TO-247 Tube (Alt: IPW60R041P6)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
    IPW60R041P6FKSA1
    DISTI # 12AC9733
    Infineon Technologies AGMOSFET, N-CH, 600V, 77.5A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:77.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power , RoHS Compliant: Yes0
    • 1:$11.5400
    • 10:$10.4300
    • 25:$9.9500
    • 50:$9.3000
    • 100:$8.6400
    IPW60R041P6FKSA1Infineon Technologies AG 
    RoHS: Not Compliant
    17
    • 1000:$7.2800
    • 500:$7.6600
    • 100:$7.9800
    • 25:$8.3200
    • 1:$8.9600
    IPW60R041P6
    DISTI # 726-IPW60R041P6
    Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
    RoHS: Compliant
    24
    • 1:$11.5400
    • 10:$10.4300
    • 25:$9.9500
    • 100:$8.6400
    IPW60R041P6FKSA1
    DISTI # 726-IPW60R041P6FKSA1
    Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
    RoHS: Compliant
    0
    • 1:$11.5400
    • 10:$10.4300
    • 25:$9.9500
    • 100:$8.6400
    IPW60R041P6FKSA1
    DISTI # 2709899
    Infineon Technologies AGMOSFET, N-CH, 600V, 77.5A, TO-247
    RoHS: Compliant
    36
    • 1:£11.8300
    • 5:£11.1300
    • 10:£9.6000
    IPW60R041P6FKSA1
    DISTI # 2709899
    Infineon Technologies AGMOSFET, N-CH, 600V, 77.5A, TO-247
    RoHS: Compliant
    0
    • 1:$14.6700
    • 10:$13.7100
    • 100:$12.1300
    • 500:$11.4700
    영상 부분 # 설명
    BDX33C

    Mfr.#: BDX33C

    OMO.#: OMO-BDX33C

    Darlington Transistors Silicon Pwr Trnsistr
    GBJL3510-BP

    Mfr.#: GBJL3510-BP

    OMO.#: OMO-GBJL3510-BP

    Bridge Rectifiers 35A 1000V GBJL Low Profile Brdge Rctfer
    RHRG1560CC

    Mfr.#: RHRG1560CC

    OMO.#: OMO-RHRG1560CC

    Diodes - General Purpose, Power, Switching 15a 600V Rectifier Hyperfast CC
    FCH47N60F-F133

    Mfr.#: FCH47N60F-F133

    OMO.#: OMO-FCH47N60F-F133

    MOSFET 600V N-Channel MOSFET
    RHRG1560CC

    Mfr.#: RHRG1560CC

    OMO.#: OMO-RHRG1560CC-ON-SEMICONDUCTOR

    DIODE ARRAY GP 600V 15A TO247
    FCH47N60F-F133

    Mfr.#: FCH47N60F-F133

    OMO.#: OMO-FCH47N60F-F133-ON-SEMICONDUCTOR

    MOSFET N-CH 600V 47A TO-247
    BDX33C

    Mfr.#: BDX33C

    OMO.#: OMO-BDX33C-STMICROELECTRONICS

    TRANS NPN DARL 100V 10A TO220AB
    GBJL3510-BP

    Mfr.#: GBJL3510-BP

    OMO.#: OMO-GBJL3510-BP-MICRO-COMMERCIAL-COMPONENTS

    Bridge Rectifiers 35A 1000V GBJL Low Profile Brdge Rctfe
    유효성
    재고:
    480
    주문 시:
    2463
    수량 입력:
    IPW60R041P6FKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$11.53
    US$11.53
    10
    US$10.43
    US$104.30
    25
    US$9.94
    US$248.50
    100
    US$8.63
    US$863.00
    250
    US$8.24
    US$2 060.00
    500
    US$7.51
    US$3 755.00
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