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BSM300D12P2E001

BSM300D12P2E001
Mfr. #:
BSM300D12P2E001
제조사:
Rohm Semiconductor
설명:
MOSFET 2N-CH 1200V 300A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSM300D12P2E001 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
BSM300D12P2E001 추가 정보
제품 속성
속성 값
Tags
BSM300, BSM30, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C ROHM BSM300D12P2E001
***p One Stop Japan
Trans MOSFET N-CH 1.2KV 300A Automotive 11-Pin Tray
***et Europe
Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 300A 11-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
***i-Key
MOSFET 2N-CH 1200V 300A
***ronik
SICDMOS 1200V 300A 1.6V Modul
***
300A SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
BSM300D12P2E001 SiC Power Module
ROHM BSM300D12P2E001 SiC Power Module is a half bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. It's designed for Motor Drives, Inverter/Converters, Photovoltaics, energy harvesting and induction heating equipment. It has low surge, low switching loss and high-speed switching is possible.
부분 # 제조 설명 재고 가격
BSM300D12P2E001
DISTI # BSM300D12P2E001-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 300A
RoHS: Compliant
Min Qty: 1
Container: Tray		6In Stock
  • 1:$663.0800
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1:€638.5900
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray - Bulk (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 4
Container: Bulk		Americas - 0
    BSM300D12P2E001
    DISTI # 755-BSM300D12P2E001    		ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		46
    • 1:$639.4400
    • 5:$600.9100
    BSM300D12P2E001ROHM Semiconductor 3
    • 4:$885.8400
    • 2:$941.2050
    • 1:$968.8875
    BSM300D12P2E001
    DISTI # BSM300D12P2E001    		ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
    RoHS: Compliant    		4
    • 1:€895.4000
    • 4:€835.4000
    • 8:€805.4000
    • 12:€777.3800
    BSM300D12P2E001
    DISTI # TMOSP11415    		ROHM SemiconductorSICDMOS 1200V 300A 1.6V Modul
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 4:$767.9200
    BSM300D12P2E001-EDEM3
    DISTI # AS0000000000108    		AgileSwitch 
    RoHS: Compliant    		2 in Stock0 on Order
    • 100:$174.2300
    • 50:$182.9400
    • 10:$191.6500
    • 1:$200.3600
    BSM300D12P2E001ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		Americas - 6
      BSM300D12P2E001ROHM SemiconductorRoHS(ship within 1day)4
      • 1:$610.7700
      • 10:$588.8000
      • 50:$571.2300
      • 100:$562.4400
      • 500:$558.0400
      • 1000:$553.6500
      영상 부분 # 설명
      BSM300D12P2E001

      Mfr.#: BSM300D12P2E001

      OMO.#: OMO-BSM300D12P2E001

      		 Discrete Semiconductor Modules 300A SiC Power Module
      BSM300D12P2E001-EDEM3

      Mfr.#: BSM300D12P2E001-EDEM3

      OMO.#: OMO-BSM300D12P2E001-EDEM3-1190

      		 신규 및 오리지널
      BSM300D12P2E001

      Mfr.#: BSM300D12P2E001

      OMO.#: OMO-BSM300D12P2E001-ROHM-SEMI

      		 MOSFET 2N-CH 1200V 300A
      유효성
      재고:
      Available
      주문 시:
      1500
      수량 입력:
      BSM300D12P2E001의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$825.33
      US$825.33
      10
      US$784.06
      US$7 840.64
      100
      US$742.80
      US$74 279.70
      500
      US$701.53
      US$350 765.25
      1000
      US$660.26
      US$660 264.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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