IKW75N65EL5XKSA1

Mfr. #:: IKW75N65EL5XKSA1
제조사:: Infineon Technologies
설명:: IGBT Transistors 650V IGBT Trenchstop 5
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IKW75N65EL5XKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: IKW75N65EL5XKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.1 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 80 A

Pd - 전력 손실:: 536 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

시리즈:: TRENCHSTOP 5 L5

포장:: 튜브

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 240

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IKW75N65EL5 SP001174464

단위 무게:: 0.213478 oz

Tags: IKW75N65, IKW75N, IKW7, IKW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW75N65EL5XKSA1 설명

***ical: Trans IGBT Chip N=-CH 650V 80A 536000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.1V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW75N65EL5XKSA1

***ineon SCT: Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS

***ineon: Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW40N65R5XKSA1

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

***ure Electronics: IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW50N65R5XKSA1

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW40N65WR5XKSA1

***ineon: The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar

***roFlash: Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,W DIODE,650V,80A,TO247AB; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:650V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:650V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

***ical: Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube

***ark: 650V FIELD STOP TRENCH IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

***ure Electronics: FGH40T65UPD Series 650 V 40 A Field Stop Trench IGBT - TO-247-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.

IKW75N65EL5XKSA1 추가 정보

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs: Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.

Market price

부분 #	제조	설명	재고	가격
IKW75N65EL5XKSA1 DISTI # V36:1790_06376939	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
IKW75N65EL5XKSA1 DISTI # V99:2348_06376939	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
IKW75N65EL5XKSA1 DISTI # IKW75N65EL5XKSA1IN-ND	Infineon Technologies AG	IGBT 650V 75A FAST DIODE TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	720:$6.1163 240:$7.0239 25:$8.0892 10:$8.4840 1:$9.3900
IKW75N65EL5XKSA1 DISTI # SP001174464	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001174464) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 8	1000:€3.8900 500:€4.1900 100:€4.2900 50:€4.4900 25:€4.6900 10:€4.8900 1:€5.2900
IKW75N65EL5XKSA1 DISTI # IKW75N65EL5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW75N65EL5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$4.6900 1440:$4.7900 960:$4.9900 480:$5.1900 240:$5.3900
IKW75N65EL5XKSA1 DISTI # 726-IKW75N65EL5XKSA1	Infineon Technologies AG	IGBT Transistors 650V IGBT Trenchstop 5 RoHS: Compliant	1	1:$8.9400 10:$8.0800 25:$7.7000 100:$6.6900 250:$6.3900 500:$5.8200
IKW75N65EL5XKSA1 DISTI # 2709881	Infineon Technologies AG	IGBT, SINGLE, 650V, 80A, TO-247 RoHS: Compliant	0	720:$9.2800 240:$10.6500 10:$12.8600 1:$14.2200
IKW75N65EL5XKSA1 DISTI # 2709881	Infineon Technologies AG	IGBT, SINGLE, 650V, 80A, TO-247 RoHS: Compliant	0	100:£5.1500 50:£5.5400 10:£5.9300 5:£6.8900 1:£7.4500

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IKW75N65EL5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes