IS43LR16160H-6BLI-TR

IS43LR16160H-6BLI-TR
Mfr. #:
IS43LR16160H-6BLI-TR
제조사:
ISSI
설명:
DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT, T&R
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IS43LR16160H-6BLI-TR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IS43LR16160H-6BLI-TR 추가 정보
제품 속성
속성 값
제조사:
ISSI
제품 카테고리:
적은 양
RoHS:
Y
유형:
SDRAM 모바일 - DDR
데이터 버스 폭:
16 bit
조직:
16 M x 16
패키지/케이스:
BGA-60
메모리 크기:
256 Mbit
최대 클록 주파수:
166 MHz
액세스 시간:
6 ns
공급 전압 - 최대:
1.95 V
공급 전압 - 최소:
1.7 V
공급 전류 - 최대:
55 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 85 C
시리즈:
IS43LR16160H
포장:
상표:
ISSI
장착 스타일:
SMD/SMT
상품 유형:
적은 양
공장 팩 수량:
2000
하위 카테고리:
메모리 및 데이터 저장
Tags
IS43LR16160H, IS43LR161, IS43LR1, IS43LR, IS43L, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Mobile DDR SDRAM
ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
영상 부분 # 설명
IS43LR16160G-6BL-TR

Mfr.#: IS43LR16160G-6BL-TR

OMO.#: OMO-IS43LR16160G-6BL-TR

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160G-6BLI-TR

Mfr.#: IS43LR16160G-6BLI-TR

OMO.#: OMO-IS43LR16160G-6BLI-TR

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160H-6BLI-TR

Mfr.#: IS43LR16160H-6BLI-TR

OMO.#: OMO-IS43LR16160H-6BLI-TR

DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT, T&R
IS43LR16160G-6BLI

Mfr.#: IS43LR16160G-6BLI

OMO.#: OMO-IS43LR16160G-6BLI

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
IS43LR16160G-6BL

Mfr.#: IS43LR16160G-6BL

OMO.#: OMO-IS43LR16160G-6BL

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
IS43LR16160F-6BLI

Mfr.#: IS43LR16160F-6BLI

OMO.#: OMO-IS43LR16160F-6BLI

DRAM 256M, 1.8V 166Mhz Mobile DDR SDRAM
IS43LR16160F-6BLI-TR

Mfr.#: IS43LR16160F-6BLI-TR

OMO.#: OMO-IS43LR16160F-6BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M,1.8V,Mobile DDR 16Mx16,166Mhz
IS43LR16160G-6BLI-TR

Mfr.#: IS43LR16160G-6BLI-TR

OMO.#: OMO-IS43LR16160G-6BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160G-6BL-TR

Mfr.#: IS43LR16160G-6BL-TR

OMO.#: OMO-IS43LR16160G-6BL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160F-6BLI

Mfr.#: IS43LR16160F-6BLI

OMO.#: OMO-IS43LR16160F-6BLI-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V 166Mhz Mobile DDR SDRAM
유효성
재고:
Available
주문 시:
1500
수량 입력:
IS43LR16160H-6BLI-TR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
시작
Top