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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC057N03LSGATMA1 DISTI # V72:2272_06390866 | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R RoHS: Compliant | 9495 |
|
| BSC057N03LSGATMA1 DISTI # BSC057N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 79In Stock |
|
| BSC057N03LSGATMA1 DISTI # BSC057N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 71A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 79In Stock |
|
| BSC057N03LSGATMA1 DISTI # BSC057N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 71A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC057N03LSGATMA1 DISTI # 30321476 | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R RoHS: Compliant | 9495 |
|
| BSC057N03LSGATMA1 DISTI # 29714330 | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC057N03LS G DISTI # BSC057N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON T/R (Alt: BSC057N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 5000 |
|
| BSC057N03LSGATMA1 DISTI # BSC057N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC057N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC057N03LSGATMA1. DISTI # 31AC8217 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:45W,No. of Pins:8Pins | 0 |
|
| BSC057N03LSGATMA1 | Infineon Technologies AG | Single N-Channel 30 V 8.5 mOhm 30 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 5000Reel |
|
| BSC057N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 40 |
|
| BSC057N03LS G DISTI # 726-BSC057N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 RoHS: Compliant | 5085 |
|
| BSC057N03LSGATMA1 DISTI # 726-BSC057N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 RoHS: Compliant | 4840 |
|
| BSC057N03LSGATMA1 DISTI # 8275261P | Infineon Technologies AG | MOSFET N-CH 17A 30V OPTIMOS3 TDSON8EP, RL | 3825 |
|
| BSC057N03LSG | NVIDIA | 501 | ||
| BSC057N03LS G | Infineon Technologies AG | 200 | ||
| BSC057N03LSG | Infineon Technologies AG | 4087 | ||
| BSC057N03LSGATMA1 DISTI # C1S322000240926 | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R RoHS: Compliant | 9495 |
|
| BSC057N03LS G DISTI # C1S322000077700 | Infineon Technologies AG | Trans MOSFET N-CH 30V 17A 8-Pin TDSON RoHS: Compliant | 18 |
|
| BSC057N03LSGATMA1 DISTI # 1775449 | Infineon Technologies AG | MOSFET, N CH, 71A, 30V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC057N03LSGATMA1 DISTI # 1775449 | Infineon Technologies AG | MOSFET, N CH, 71A, 30V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC057N03LSG | Infineon Technologies AG | 30V,71A,N Channel Power MOSFET | 4000 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: BSC057N08NS3GATMA1 OMO.#: OMO-BSC057N08NS3GATMA1 |
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC057N08NS3 G OMO.#: OMO-BSC057N08NS3-G |
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC057N03LSGATMA1 OMO.#: OMO-BSC057N03LSGATMA1 |
MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC057N03MSGATMA1 OMO.#: OMO-BSC057N03MSGATMA1 |
MOSFET LV POWER MOS |
|
|
Mfr.#: BSC057N03LSGATMA1 |
MOSFET N-CH 30V 71A TDSON-8 |
|
Mfr.#: BSC057N03LSGATMA1 , TDA8 |
신규 및 오리지널 |
|
Mfr.#: BSC057N03MSGATMA1 , TDA8 |
신규 및 오리지널 |
|
Mfr.#: BSC057N08NS3 G OMO.#: OMO-BSC057N08NS3-G-1190 |
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC057N08NS3G OMO.#: OMO-BSC057N08NS3G-1190 |
Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G) |
|
Mfr.#: BSC057N08NS3G. OMO.#: OMO-BSC057N08NS3G--1190 |
신규 및 오리지널 |