IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1
Mfr. #:
IPW65R080CFDAFKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 650V 43.3A TO247-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW65R080CFDAFKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPW65R080CFDAFKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
43.3 A
Rds On - 드레인 소스 저항:
72 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
161 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
391 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
21.1 mm
길이:
16.13 mm
시리즈:
쿨모스 CFDA
트랜지스터 유형:
1 N-Channel
너비:
5.21 mm
상표:
인피니언 테크놀로지스
가을 시간:
6 ns
상품 유형:
MOSFET
상승 시간:
18 ns
공장 팩 수량:
240
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
85 ns
일반적인 켜기 지연 시간:
20 ns
부품 번호 별칭:
IPW65R080CFDA IPW65R8CFDAXK SP000875806
단위 무게:
1.340411 oz
Tags
IPW65R080CFDA, IPW65R08, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3
***p One Stop Japan
Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHS
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.072Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPW65R080CFDAFKSA1
DISTI # V99:2348_06378457
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAFKSA1
DISTI # IPW65R080CFDAFKSA1-ND
Infineon Technologies AGMOSFET N-CH 700V 43.3A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
1563In Stock
  • 240:$9.2271
  • 10:$11.2220
  • 1:$12.4700
IPW65R080CFDAFKSA1
DISTI # 31240601
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
280
  • 10:$8.8290
  • 1:$9.5990
IPW65R080CFDAXK
DISTI # IPW65R080CFDAFKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$6.4900
  • 480:$6.1900
  • 960:$5.9900
  • 1440:$5.7900
  • 2400:$5.6900
IPW65R080CFDAFKSA1
DISTI # 13AC9099
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:43.3A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1:$12.6400
  • 10:$11.5200
  • 25:$11.0400
  • 50:$10.3800
  • 100:$9.7300
IPW65R080CFDAFKSA1
DISTI # 726-IPW65R080CFDAFKS
Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant
1401
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDA
DISTI # 726-IPW65R080CFDA
Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3
RoHS: Compliant
158
  • 1:$10.7900
  • 10:$9.7500
  • 25:$9.3000
  • 100:$8.0800
  • 250:$7.7100
  • 500:$7.0300
IPW65R080CFDAFKSA1
DISTI # 2726080
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant
140
  • 1:$19.8800
  • 10:$17.8900
  • 240:$14.7100
IPW65R080CFDAFKSA1
DISTI # 2726080
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
RoHS: Compliant
161
  • 1:£6.2100
  • 5:£5.5200
  • 10:£5.2400
  • 50:£5.2200
  • 100:£5.1900
IPW65R080CFDAFKSA1
DISTI # C1S322000254716
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
280
  • 240:$7.5580
  • 10:$8.8290
  • 1:$9.5990
영상 부분 # 설명
AMC1311BDWV

Mfr.#: AMC1311BDWV

OMO.#: OMO-AMC1311BDWV

Isolation Amplifiers 200 KHZ REINFORCED ISOLATED AMPLIFIER
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

MOSFET MOSFET_(75V,120V(
CR101-50AE

Mfr.#: CR101-50AE

OMO.#: OMO-CR101-50AE

Heat Sinks Aluminum heatsink 50mmBlkAnodized
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
0697H9150-02

Mfr.#: 0697H9150-02

OMO.#: OMO-0697H9150-02-BEL

0697H9150-02
AMC1311BDWV

Mfr.#: AMC1311BDWV

OMO.#: OMO-AMC1311BDWV-TEXAS-INSTRUMENTS

PRECISION REINFORCED ISOLATED AM
유효성
재고:
825
주문 시:
2808
수량 입력:
IPW65R080CFDAFKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$10.78
US$10.78
10
US$9.74
US$97.40
25
US$9.29
US$232.25
100
US$8.07
US$807.00
250
US$7.70
US$1 925.00
500
US$7.02
US$3 510.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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