SIR872DP-T1-GE3

Name: Vishay - SIR872DP-T1-GE3
Brand: Vishay
SKU: OMO-2910506
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIR872DP-T1-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 150V 18mOhm@10V 60A N-Ch
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIR872DP-T1-GE3 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

시리즈: SIRxxxDP

단위 무게: 0.017870 oz

패키지 케이스: SO-8

기술: 시

채널 수: 1 Channel

트랜지스터형: 1 N-Channel

Id-연속-드레인-전류: 53.7 A

Vds-드레인-소스-고장-전압: 150 V

Rds-On-Drain-Source-Resistance: 18 mOhms

트랜지스터 극성: N-채널

Tags: SIR872, SIR87, SIR8, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR872DP-T1-GE3 설명

***ure Electronics: SiR872DP Series N-Channel 150 V 0.0200 Ohm 104 W SMT Mosfet - PowerPAK SO-8

***et: Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N-CH, 150V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:53.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0148ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

Market price

부분 #	제조	설명	재고	가격
SIR872DP-T1-GE3 DISTI # V99:2348_09216043	Vishay Intertechnologies	Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO EP RoHS: Compliant	495	3000:$1.2918 1000:$1.4189 500:$1.6697 100:$2.0524 10:$2.4405 1:$2.6555
SIR872DP-T1-GE3 DISTI # SIR872DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 150V 53.7A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	137In Stock	1000:$1.5170 500:$1.8309 100:$2.3540 10:$2.9290 1:$3.2400
SIR872DP-T1-GE3 DISTI # SIR872DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 150V 53.7A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	137In Stock	1000:$1.5170 500:$1.8309 100:$2.3540 10:$2.9290 1:$3.2400
SIR872DP-T1-GE3 DISTI # SIR872DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 150V 53.7A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.3713
SIR872DP-T1-GE3 DISTI # 30574640	Vishay Intertechnologies	Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO EP RoHS: Compliant	495	100:$2.0524 10:$2.4405 5:$2.6555
SIR872DP-T1-GE3 DISTI # SIR872DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR872DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIR872DP-T1-GE3 DISTI # 78-SIR872DP-T1-GE3	Vishay Intertechnologies	MOSFET 150V 18mOhm@10V 60A N-Ch RoHS: Compliant	0
SIR872DPT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2550
SIR872DP-T1-GE3	Vishay Intertechnologies	MOSFET 150V 18mOhm@10V 60A N-Ch	Americas -
SIR872DP-T1-GE3 DISTI # 2283696	Vishay Intertechnologies	MOSFET, N-CH, 150V, PPAK-SO8 RoHS: Compliant	0	1:$4.5500 10:$3.7800 100:$2.9300 500:$2.5700 1000:$2.4600 3000:$2.4400
SIR872DP-T1-GE3 DISTI # C1S806001191110	Vishay Intertechnologies	MOSFETs	495	100:$2.0524 10:$2.4405 1:$2.6555

SIR872DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes