KSD882YSTU

KSD882YSTU
Mfr. #:
KSD882YSTU
제조사:
ON Semiconductor / Fairchild
설명:
Bipolar Transistors - BJT NPN Epitaxial Sil
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
KSD882YSTU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
양극성 트랜지스터 - BJT
RoHS:
Y
장착 스타일:
구멍을 통해
패키지/케이스:
TO-126-3
트랜지스터 극성:
NPN
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
30 V
컬렉터-베이스 전압 VCBO:
40 V
이미터-베이스 전압 VEBO:
5 V
수집기-이미터 포화 전압:
0.3 V
최대 DC 수집기 전류:
3 A
이득 대역폭 곱 fT:
90 MHz
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
KSD882
DC 전류 이득 hFE 최대:
400
키:
11 mm
길이:
8 mm
포장:
튜브
너비:
3.25 mm
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
3 A
DC 수집기/기본 이득 hfe 최소:
60
Pd - 전력 손실:
10 W
상품 유형:
BJT - 양극성 트랜지스터
공장 팩 수량:
1920
하위 카테고리:
트랜지스터
단위 무게:
0.026843 oz
Tags
KSD882YST, KSD882YS, KSD882Y, KSD882, KSD88, KSD8, KSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
KSD882 Series 30 V 3 A 1 W NPN Epitaxial Silicon Transistor - TO-126
***roFlash
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
***Yang
Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***ment14 APAC
Transistor, NPN, 30V, 3A, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:90MHz; Power Dissipation
***nell
TRANSISTOR, NPN, 30V, 3A, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 10W; DC Collector Current: 3A; DC Current Gain hFE: 160hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ca Corp
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
***Yang
Trans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Bulk - Bulk
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
*** Electronic Components
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
***ical
Trans GP BJT NPN 60V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube
***r Electronics
Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN
***eco
Transistor General Purpose BJT NPN 25 Volt 5A 3-Pin(3+Tab) TO-126
***emi
5.0 A, 25 V NPN Bipolar Power Transistor
***ure Electronics
MJE200 Series 25 V 5 A 15 W SMT NPN Epitaxial Silicon Transistor - TO-126
***r Electronics
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***hard Electronics
Bipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 20W
***ical
Trans GP BJT NPN 450V 1.5A 3-Pin TO-126 Bulk
***et
450V NPN HIGH VOLTAGE POWER TRANSISTOR,T
***et
Bipolar (BJT) Transistor NPN 300V 100mA 100MHz 4W Through Hole TO-126-3
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***or
TRANS NPN 300V 100MA TO126-3
***et
Bipolar (BJT) Transistor NPN - Darlington 80V 1.5A 1W Through Hole TO-126-3
*** Electronic Components
Darlington Transistors NPN Epitaxial Sil Darl
***i-Key
TRANS NPN DARL 80V 1.5A TO-126
부분 # 제조 설명 재고 가격
KSD882YSTU
DISTI # V99:2348_06302027
ON SemiconductorTrans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube3811
  • 1000:$0.1539
  • 500:$0.1981
  • 100:$0.1986
  • 10:$0.3583
  • 1:$0.4284
KSD882YSTU
DISTI # V36:1790_06302027
ON SemiconductorTrans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube0
    KSD882YSTU
    DISTI # KSD882YSTU-ND
    ON SemiconductorTRANS NPN 30V 3A TO-126
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    3385In Stock
    • 5760:$0.1445
    • 3840:$0.1545
    • 1920:$0.1694
    • 100:$0.2790
    • 25:$0.3488
    • 10:$0.3740
    • 1:$0.4400
    KSD882YSTU
    DISTI # 31954828
    ON SemiconductorTrans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Tube3811
    • 1000:$0.1654
    • 500:$0.2130
    • 100:$0.2135
    • 55:$0.3502
    KSD882YSTU
    DISTI # KSD882YSTU
    ON SemiconductorTrans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail (Alt: KSD882YSTU)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
      KSD882YSTU
      DISTI # KSD882YSTU
      ON SemiconductorTrans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: KSD882YSTU)
      RoHS: Compliant
      Min Qty: 1786
      Container: Bulk
      Americas - 0
      • 17860:$0.1719
      • 8930:$0.1769
      • 5358:$0.1789
      • 3572:$0.1809
      • 1786:$0.1829
      KSD882YSTU
      DISTI # KSD882YSTU
      ON SemiconductorTrans GP BJT NPN 30V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: KSD882YSTU)
      RoHS: Compliant
      Min Qty: 1920
      Container: Tube
      Americas - 0
      • 19200:$0.1379
      • 11520:$0.1419
      • 7680:$0.1439
      • 3840:$0.1459
      • 1920:$0.1469
      KSD882YSTU
      DISTI # 46AC0936
      ON SemiconductorTRANSISTOR, NPN, 30V, 3A, TO-126-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:30V,Transition Frequency ft:90MHz,Power Dissipation Pd:10W,DC Collector Current:3A,DC Current Gain hFE:160hFE,Transistor Case RoHS Compliant: Yes960
      • 25000:$0.1460
      • 10000:$0.1480
      • 2500:$0.1590
      • 1000:$0.1780
      • 500:$0.2010
      • 100:$0.2490
      • 10:$0.4370
      • 1:$0.5610
      KSD882YSTU
      DISTI # 512-KSD882YSTU
      ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
      RoHS: Compliant
      3991
      • 1:$0.4100
      • 10:$0.3430
      • 100:$0.2090
      • 1000:$0.1620
      • 2500:$0.1380
      KSD882YS
      DISTI # 512-KSD882YS
      ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
      RoHS: Compliant
      1500
      • 1:$0.5100
      • 10:$0.3840
      • 100:$0.2090
      • 1000:$0.1570
      • 2500:$0.1350
      KSD882YSTUFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
      RoHS: Compliant
      25788
      • 1000:$0.1800
      • 500:$0.1900
      • 100:$0.2000
      • 25:$0.2100
      • 1:$0.2300
      KSD882YSTU
      DISTI # 8067177
      ON SemiconductorTRANSISTORFAIRCHILDKSD882YSTU, TU3780
      • 600:£0.0910
      • 60:£0.0930
      KSD882YSTU
      DISTI # 2825111
      ON SemiconductorTRANSISTOR, NPN, 30V, 3A, TO-126-3
      RoHS: Compliant
      1190
      • 5000:$0.1770
      • 1000:$0.1820
      • 500:$0.1980
      • 250:$0.2410
      • 100:$0.2930
      • 25:$0.4300
      • 5:$0.5010
      KSD882YSTU
      DISTI # 2825111
      ON SemiconductorTRANSISTOR, NPN, 30V, 3A, TO-126-3990
      • 500:£0.1290
      • 250:£0.1480
      • 100:£0.1660
      • 25:£0.2960
      • 5:£0.3100
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      SJ5-43502PM

      Mfr.#: SJ5-43502PM

      OMO.#: OMO-SJ5-43502PM

      Phone Connectors Audio Jacks
      ASI09N27M-05Q

      Mfr.#: ASI09N27M-05Q

      OMO.#: OMO-ASI09N27M-05Q-MALLORY-SONALERT

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      Mfr.#: SJ5-43502PM

      OMO.#: OMO-SJ5-43502PM-CUI

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      1C10Z5U104M050B

      Mfr.#: 1C10Z5U104M050B

      OMO.#: OMO-1C10Z5U104M050B-1106

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      유효성
      재고:
      Available
      주문 시:
      1986
      수량 입력:
      KSD882YSTU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.41
      US$0.41
      10
      US$0.34
      US$3.43
      100
      US$0.21
      US$20.90
      1000
      US$0.16
      US$162.00
      2500
      US$0.14
      US$345.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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