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SIHD6N62E-GE3

SIHD6N62E-GE3
Mfr. #:
SIHD6N62E-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 620V Vds 30V Vgs DPAK (TO-252)
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHD6N62E-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD6N62E-GE3 DatasheetSIHD6N62E-GE3 Datasheet (P4-P6)SIHD6N62E-GE3 Datasheet (P7-P9)SIHD6N62E-GE3 Datasheet (P10)
ECAD Model:
추가 정보:
SIHD6N62E-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
620 V
Id - 연속 드레인 전류:
6 A
Rds On - 드레인 소스 저항:
900 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
17 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
78 W
구성:
하나의
채널 모드:
상승
포장:
대부분
시리즈:
E
상표:
비쉐이 / 실리콘닉스
가을 시간:
16 ns
상품 유형:
MOSFET
상승 시간:
10 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
22 ns
일반적인 켜기 지연 시간:
12 ns
단위 무게:
0.050717 oz
Tags
SIHD6N62, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 620 V 900 mO 34 nC Surface Mount Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin DPAK
***i-Key
MOSFET N-CH 620V 6A TO-252
***ark
N-CHANNEL 620V
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 620V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 620V, 6A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:620V; Resistenza di Attivazione Rds(on):0.78ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:78W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHD6N62E-GE3
DISTI # 31638809		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
SIHD6N62E-GE3
DISTI # V99:2348_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
  • 1:$1.5349
SIHD6N62E-GE3
DISTI # V36:1790_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.6417
  • 1500000:$0.6446
  • 300000:$0.9259
  • 30000:$1.4340
  • 3000:$1.5200
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3-ND		Vishay SiliconixMOSFET N-CH 620V 6A TO-252
Min Qty: 1
Container: Tube		3090In Stock
  • 5000:$0.6259
  • 2500:$0.6588
  • 500:$0.8941
  • 100:$1.0824
  • 25:$1.3176
  • 10:$1.3880
  • 1:$1.5500
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK (Alt: SIHD6N62E-GE3)
Min Qty: 3000		Europe - 0
  • 30000:€0.5529
  • 18000:€0.5779
  • 12000:€0.6539
  • 6000:€0.8069
  • 3000:€1.1249
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK - Tape and Reel (Alt: SIHD6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6029
  • 18000:$0.6199
  • 12000:$0.6369
  • 6000:$0.6639
  • 3000:$0.6849
SIHD6N62E-GE3
DISTI # 78-SIHD6N62E-GE3		Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		4048
  • 1:$1.5500
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.8940
  • 1000:$0.6580
  • 3000:$0.6250
  • 9000:$0.6020
SIHD6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas -
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		0
    • 5025:$0.9840
    • 2550:$1.0400
    • 525:$1.4100
    • 150:$1.7100
    • 75:$2.0700
    • 10:$2.1900
    • 1:$2.4400
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		10
    • 5000:£0.5420
    • 1000:£0.5710
    • 500:£0.6830
    • 250:£0.7380
    • 100:£0.7930
    • 10:£1.0800
    • 1:£1.4200
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    KTR25JZPF1005

    Mfr.#: KTR25JZPF1005

    OMO.#: OMO-KTR25JZPF1005-ROHM-SEMI

    		 RES SMD 10M OHM 1% 1/3W 1210
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    Mfr.#: KTR25JZPF1603

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    KTR25JZPF4703

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    OMO.#: OMO-KTR25JZPF4703-ROHM-SEMI

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    Mfr.#: XF2M-4015-1A

    OMO.#: OMO-XF2M-4015-1A-OMRON

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    유효성
    재고:
    Available
    주문 시:
    1987
    수량 입력:
    SIHD6N62E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.64
    US$1.64
    10
    US$1.35
    US$13.50
    100
    US$1.04
    US$104.00
    500
    US$0.89
    US$447.00
    1000
    US$0.70
    US$705.00
    3000
    US$0.66
    US$1 974.00
    6000
    US$0.62
    US$3 750.00
    9000
    US$0.60
    US$5 418.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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