FDG6335N

Mfr. #:: FDG6335N
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET FDG6335N
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDG6335N 데이터 시트
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제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-323-6

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 700 mA

Rds On - 드레인 소스 저항:: 300 mOhms

Vgs - 게이트 소스 전압:: 12 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 300 mW

구성:: 듀얼

채널 모드:: 상승

상표명:: 파워트렌치

포장:: 릴

키:: 1.1 mm

길이:: 2 mm

제품:: MOSFET 소신호

시리즈:: FDG6335N

트랜지스터 유형:: 2 N-Channel

유형:: MOSFET

너비:: 1.25 mm

상표:: 온세미컨덕터 / 페어차일드

순방향 트랜스컨덕턴스 - 최소:: 2.8 S

가을 시간:: 7 ns

상품 유형:: MOSFET

상승 시간:: 7 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 9 ns

일반적인 켜기 지연 시간:: 5 ns

부품 번호 별칭:: FDG6335N_NL

단위 무게:: 0.000988 oz

Tags: FDG6335, FDG633, FDG63, FDG6, FDG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDG6335N 설명

***Yang: Transistor MOSFET Array Dual N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ

***ment14 APAC: MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:20V; On

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.

***nell: MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***eco: Transistor MOSFET N/P-Channel 20 Volt 0.7A/0.6A 6-Pin SC-70

***ure Electronics: Dual N & P-Channel 20 V 300 mOhm PowerTrench Mosfet SC70-6

***roFlash: Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, DUAL, NP, SMD, SC70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:700mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

***emi: PowerTrench® MOSFET, P-Channel 2.5V Specified, -20 V, -0.6 A, 420 mΩ

***Yang: Transistor MOSFET Array Dual P-CH 20V 0.6A 6-Pin SC-70 T/R - Tape and Reel

***el Electronic: PMIC - Power Management - Specialized Tape & Reel (TR) 3 (168 Hours) 32-WFQFN Exposed Pad Surface Mount Processor -40°C~85°C 2.7V~5.5V QUAD IC REG BUCK LDO 32TQFN

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

***et Japan: Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/R

***rchild Semiconductor: These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS

***nell: MOSFET, DUAL P-CH, -20V, -0.5A, SC-70-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -500mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Electronics: SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363

***ure Electronics: N / P-Channel 20 V 0.39/0.85 O Power Mosfet - SOT-363 (SC-70-6)

***nell: MOSFET, N/P-CH, 20V, 0.7A, SOT-363-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.325ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 340mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)

***ure Electronics: Dual N-Channel 20 V 0.385 Ohms Surface Mount Power Mosfet - SOT-363

***et Europe: Transistor MOSFET Array Dual N-CH 20V 0.66A 6-Pin SC-70 T/R

***ment14 APAC: MOSFET, DUAL, N, 6-SC-70; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:200mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (15-Dec-2010); Continuous Drain Current Id:700mA; Current Id Max:660mA; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):385mohm; Package / Case:SC-70; Power Dissipation Pd:200mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V

***(Formerly Allied Electronics): SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89

***ment14 APAC: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance

***nell: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Market price

부분 #	제조	설명	재고	가격
FDG6335N DISTI # FDG6335NTR-ND	ON Semiconductor	MOSFET 2N-CH 20V 0.7A SOT-363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2431
FDG6335N DISTI # FDG6335NCT-ND	ON Semiconductor	MOSFET 2N-CH 20V 0.7A SOT-363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2763 500:$0.3453 100:$0.4662 10:$0.6040 1:$0.6900
FDG6335N DISTI # FDG6335NDKR-ND	ON Semiconductor	MOSFET 2N-CH 20V 0.7A SOT-363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2763 500:$0.3453 100:$0.4662 10:$0.6040 1:$0.6900
FDG6335N DISTI # FDG6335N	ON Semiconductor	Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R (Alt: FDG6335N) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDG6335N DISTI # FDG6335N	ON Semiconductor	Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R (Alt: FDG6335N) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2559 6000:€0.2089 12000:€0.1919 18000:€0.1769 30000:€0.1639
FDG6335N DISTI # FDG6335N	ON Semiconductor	Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG6335N) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1809 6000:$0.1799 12000:$0.1779 18000:$0.1759 30000:$0.1709
FDG6335N DISTI # FDG6335N	ON Semiconductor	Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R - Cut TR (SOS) (Alt: FDG6335N) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.2099 30:$0.2069 75:$0.2049 150:$0.2019 375:$0.1959 750:$0.1889 1500:$0.1889
FDG6335N DISTI # 58K1457	ON Semiconductor	DUAL N CHANNEL MOSFET, 20V, 700mA, SC-70,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:700mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes	0	1:$0.5760 25:$0.4790 50:$0.3950 100:$0.3110 250:$0.2910 500:$0.2700 1000:$0.2500
FDG6335N DISTI # 29X6689	ON Semiconductor	MOSFET, N CHANNEL, 20V, 0.7A, SC-70-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:700mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes	0	1:$0.2120 3000:$0.2100 6000:$0.2070 12000:$0.2050
FDG6335N DISTI # 512-FDG6335N	ON Semiconductor	MOSFET FDG6335N RoHS: Compliant	0	1:$0.5700 10:$0.4730 100:$0.3050 1000:$0.2440 3000:$0.2060 9000:$0.1990
FDG6335N	Fairchild Semiconductor Corporation		1836
FDG6335N DISTI # 2453408	ON Semiconductor	MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6 RoHS: Compliant	0	5:£0.4130 25:£0.3880 100:£0.2360 250:£0.2100 500:£0.1850
FDG6335N DISTI # 2453408RL	ON Semiconductor	MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6 RoHS: Compliant	0	1:$0.9020 10:$0.7490 100:$0.4830
FDG6335N DISTI # 2453408	ON Semiconductor	MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6 RoHS: Compliant	0	1:$0.9020 10:$0.7490 100:$0.4830

영상	부분 #	설명
	Mfr.#: FDG6301N OMO.#: OMO-FDG6301N	MOSFET SC70-6 N-CH 25V
	Mfr.#: FDG6322C_D87Z OMO.#: OMO-FDG6322C-D87Z-ON-SEMICONDUCTOR	MOSFET N/P-CH 25V SC70-6
	Mfr.#: FDG6323 OMO.#: OMO-FDG6323-1190	신규 및 오리지널
	Mfr.#: FDG6323L-NL OMO.#: OMO-FDG6323L-NL-1190	신규 및 오리지널
	Mfr.#: FDG6324L , 1N5232BRL OMO.#: OMO-FDG6324L-1N5232BRL-1190	신규 및 오리지널
	Mfr.#: FDG6331L(OS 30) OMO.#: OMO-FDG6331L-OS-30--1190	신규 및 오리지널
	Mfr.#: FDG6335N OMO.#: OMO-FDG6335N-ON-SEMICONDUCTOR	MOSFET 2N-CH 20V 0.7A SOT-363
	Mfr.#: FDG6335N-NL OMO.#: OMO-FDG6335N-NL-1190	신규 및 오리지널
	Mfr.#: FDG6306P-CUT TAPE OMO.#: OMO-FDG6306P-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: FDG6332C-- OMO.#: OMO-FDG6332C---1190	신규 및 오리지널

FDG6335N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes