IRF8788TRPBF

Mfr. #:: IRF8788TRPBF
제조사:: Infineon / IR
설명:: MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF8788TRPBF 데이터 시트
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HTML Datasheet:: IRF8788TRPBF Datasheet IRF8788TRPBF Datasheet (P4-P6)IRF8788TRPBF Datasheet (P7-P9)
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추가 정보:: IRF8788TRPBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 24 A

Rds On - 드레인 소스 저항:: 3.04 mOhms

Vgs th - 게이트 소스 임계 전압:: 1.8 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 44 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.5 W

구성:: 하나의

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

트랜지스터 유형:: 1 N-Channel

너비:: 3.9 mm

상표:: 인피니언 / IR

순방향 트랜스컨덕턴스 - 최소:: 95 S

가을 시간:: 11 ns

상품 유형:: MOSFET

상승 시간:: 24 ns

공장 팩 수량:: 4000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 23 ns

일반적인 켜기 지연 시간:: 23 ns

부품 번호 별칭:: SP001565728

단위 무게:: 0.017870 oz

Tags: IRF878, IRF87, IRF8, IRF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8788TRPBF 설명

***Components: On a Reel of 4000, N-Channel MOSFET, 24 A, 30 V, 8-Pin SOIC Infineon IRF8788TRPBF

***ure Electronics: Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8

***p One Stop Japan: Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET N-CH 30V 24A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

*** Source Electronics: MOSFET N-CH 30V 24A 8-SO

***ied Electronics & Automation: MOSFET; 30V 24.000A SO-8

***ukat: N-Ch 30V 24A 2,5W 0,0028R SO8

***ronik: N-CH 30V 24A 2,8mOhm SO8

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:24mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):2.8mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 24A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 30V, 24A, SOIC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:24A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IRF8788TRPBF 추가 정보

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

부분 #	제조	설명	재고	가격
IRF8788TRPBF DISTI # V72:2272_13891207	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	2823	1000:$0.4938 500:$0.5958 250:$0.6368 100:$0.6585 25:$0.8038 10:$0.8074 1:$0.9033
IRF8788TRPBF DISTI # IRF8788TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 24A 8-SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11071In Stock	1000:$0.6161 500:$0.7804 100:$1.0063 10:$1.2730 1:$1.4400
IRF8788TRPBF DISTI # IRF8788TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 24A 8-SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11071In Stock	1000:$0.6161 500:$0.7804 100:$1.0063 10:$1.2730 1:$1.4400
IRF8788TRPBF DISTI # IRF8788TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 24A 8-SO RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	8000In Stock	4000:$0.5583
IRF8788TRPBF DISTI # 30325293	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	8000	40000:$0.3709 24000:$0.3779 16000:$0.3910 8000:$0.4051 4000:$0.4202
IRF8788TRPBF DISTI # 30615879	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	4285	200:$0.7599 100:$0.7841 50:$0.8989 16:$1.3260
IRF8788TRPBF DISTI # 30610749	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	4000	22:$1.1550
IRF8788TRPBF DISTI # 31084436	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	2823	1000:$0.4938 500:$0.5958 250:$0.6368 100:$0.6585 25:$0.8038 18:$0.8074
IRF8788TRPBF DISTI # IRF8788TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8788TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.4169 8000:$0.4019 16000:$0.3879 24000:$0.3749 40000:$0.3679
IRF8788TRPBF DISTI # IRF8788TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin SOIC T/R (Alt: IRF8788TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.3409 8000:$0.3268 12000:$0.3224 20000:$0.3099 40000:$0.3059 100000:$0.2983 200000:$0.2910
IRF8788TRPBF DISTI # SP001565728	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin SOIC T/R (Alt: SP001565728) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.5349 8000:€0.4379 16000:€0.4009 24000:€0.3699 40000:€0.3439
IRF8788TRPBF-1 DISTI # SP001565738	Infineon Technologies AG	Trans MOSFET N-CH 30V 24A 8-Pin SOIC T/R (Alt: SP001565738) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0
IRF8788TRPBF DISTI # 13AC9217	Infineon Technologies AG	MOSFET, N-CH, 30V, 24A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation , RoHS Compliant: Yes	3913	1:$1.1900 10:$1.0200 25:$0.9400 50:$0.8600 100:$0.7800 250:$0.7350 500:$0.6890 1000:$0.5440
IRF8788TRPBF DISTI # 70018026	Infineon Technologies AG	MOSFET,30V 24.000A SO-8 RoHS: Compliant	0	4000:$1.6100
IRF8788TRPBF DISTI # 942-IRF8788TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg RoHS: Compliant	29782	1:$1.1900 10:$1.0200 100:$0.7800 500:$0.6890 1000:$0.5440 4000:$0.4830 8000:$0.4650
IRF8788TRPBF DISTI # 1300967P	Infineon Technologies AG	MOSFET HEXFET N-CH 30V 24A SOIC8, RL	3960	50:£0.6180 500:£0.4990 1000:£0.3960 2500:£0.3790
IRF8788TRPBF DISTI # IRF8788PBF-GURT	Infineon Technologies AG	N-Ch 30V 24A 2,5W 0,0028R SO8 RoHS: Compliant	6100	50:€0.4490 100:€0.3890 500:€0.3590 2000:€0.3455
IRF8788TRPBF DISTI # XSLY00000000875	INFINEON/IR	SO-8 RoHS: Compliant	8640	4000:$0.4429 8640:$0.4133
IRF8788TRPBF DISTI # 2725926	Infineon Technologies AG	MOSFET, N-CH, 30V, 24A, SOIC RoHS: Compliant	3908	1:$1.8800 10:$1.6200 100:$1.2400 500:$1.1000 1000:$0.8610 4000:$0.7650
IRF8788TRPBF DISTI # C1S322000487253	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	8000	4000:$0.4840
IRF8788TRPBF DISTI # C1S322000487262	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	4285	500:$0.5250 200:$0.5960 100:$0.6150 50:$0.7050 10:$1.0400 5:$1.2900
IRF8788TRPBF DISTI # C1S322000487244	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R RoHS: Compliant	4000	500:$0.4910 200:$0.5170 100:$0.5540 50:$0.6260 10:$0.8630 5:$0.9240
IRF8788TRPBF DISTI # 2725926	Infineon Technologies AG	MOSFET, N-CH, 30V, 24A, SOIC RoHS: Compliant	3538	5:£0.8080 25:£0.6300 100:£0.6020 250:£0.5560 500:£0.5090

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IRF8788TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes