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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB22N03S4L15ATMA1 DISTI # IPB22N03S4L15ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 22A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB22N03S4L15ATMA1 DISTI # IPB22N03S4L15ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 22A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB22N03S4L15ATMA1) RoHS: Compliant Min Qty: 472 Container: Bulk | Americas - 0 |
|
| IPB22N03S4L15ATMA1 DISTI # IPB22N03S4L-15 | Infineon Technologies AG | Trans MOSFET N-CH 30V 22A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB22N03S4L-15) RoHS: Not Compliant Min Qty: 472 Container: Bulk | Americas - 0 |
|
| IPB22N03S4L15ATMA1 DISTI # IPB22N03S4L-15ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 22A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB22N03S4L-15ATMA1) RoHS: Compliant Min Qty: 521 Container: Bulk | Americas - 0 |
|
| IPB22N03S4L15ATMA1 DISTI # IPB22N03S4L15ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 22A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB22N03S4L15ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB22N03S4L15ATMA1 DISTI # SP000275308 | Infineon Technologies AG | Trans MOSFET N-CH 30V 22A 3-Pin(2+Tab) TO-263 (Alt: SP000275308) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
| IPB22N03S4L-15 DISTI # 726-IPB22N03S4L-15 | Infineon Technologies AG | MOSFET N-Ch 30V 22A D2PAK-2 OptiMOS-T2 RoHS: Compliant | 1137 |
|
| IPB22N03S4L-15 | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1373 |
|
| IPB22N03S4L15ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 8000 |
|
| IPB22N03S4L-15ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 8000 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPB25N06S3-22 OMO.#: OMO-IPB25N06S3-22-1190 |
신규 및 오리지널 |
|
Mfr.#: IPB25N06S3-25 |
MOSFET N-CH 55V 25A D2PAK |
|
|
Mfr.#: IPB25N06S3L-22 |
MOSFET N-CH 55V 25A D2PAK |