CGH60060D-GP4

Mfr. #:: CGH60060D-GP4
제조사:: N/A
설명:: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGH60060D-GP4 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CGH60060D-GP4 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

기술:: GaN SiC

Vds - 드레인 소스 항복 전압:: 32 V

Vgs - 게이트 소스 항복 전압:: 100 V

Pd - 전력 손실:: 45 W

장착 스타일:: SMD/SMT

포장:: 쟁반

구성:: 하나의

키:: 4.064 mm

길이:: 9.652 mm

너비:: 5.842 mm

상표:: 코르보

게이트 소스 차단 전압:: - 2.9 V

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1092444

Tags: CGH600, CGH60, CGH6, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGH60060D-GP4 설명

***i-Key: RF MOSFET HEMT 28V DIE

***hardson RFPD: RF POWER TRANSISTOR

CGH60060D-GP4 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

부분 #	제조	설명	재고	가격
CGH60060D-GP4 DISTI # V36:1790_22799857	Cree, Inc.	RF POWER TRANSISTOR	0	50000:$89.9500 25000:$89.9600 5000:$92.1300 500:$97.3900 50:$98.3700
CGH60060D-GP4 DISTI # CGH60060D-GP4-ND	Wolfspeed	RF MOSFET HEMT 28V DIE RoHS: Compliant Min Qty: 10 Container: Tray	400In Stock	10:$80.6700
CGH60060D-GP4 DISTI # 941-CGH60060D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt RoHS: Compliant	60	10:$90.5100
CGH60060D-GP4 DISTI # CGH60060D-GP4	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	50:$82.4600

관련 상품

영상	부분 #	설명
	Mfr.#: CGH60030D-GP4 OMO.#: OMO-CGH60030D-GP4	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
	Mfr.#: CGH60008D-GP4 OMO.#: OMO-CGH60008D-GP4	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 8 Watt
	Mfr.#: CGH60060D-GP4 OMO.#: OMO-CGH60060D-GP4	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt
	Mfr.#: CGH60015D-GP4 OMO.#: OMO-CGH60015D-GP4	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 15 Watt
	Mfr.#: CGH60015D-GP4 OMO.#: OMO-CGH60015D-GP4-WOLFSPEED	RF MOSFET HEMT 28V DIE
	Mfr.#: CGH60030D-GP4 OMO.#: OMO-CGH60030D-GP4-WOLFSPEED	RF MOSFET HEMT 28V DIE
	Mfr.#: CGH60060D-GP4 OMO.#: OMO-CGH60060D-GP4-WOLFSPEED	RF MOSFET HEMT 28V DIE
	Mfr.#: CGH60015D OMO.#: OMO-CGH60015D-318	RF JFET Transistors DC-6GHz 15W GaN Gain@ 4GHz 15dB
	Mfr.#: CGH60030D OMO.#: OMO-CGH60030D-318	RF JFET Transistors DC-6GHz 30W GaN Gain@ 4GHz 15dB
	Mfr.#: CGH60060D OMO.#: OMO-CGH60060D-318	RF JFET Transistors DC-6GHz 60W GaN Gain@ 4GHz 13dB