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APT13005T-G1

APT13005T-G1
Mfr. #:
APT13005T-G1
제조사:
Diodes Incorporated
설명:
Bipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
APT13005T-G1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT13005T-G1 DatasheetAPT13005T-G1 Datasheet (P4-P6)
ECAD Model:
제품 속성
속성 값
제조사:
다이오드 주식회사
제품 카테고리:
양극성 트랜지스터 - BJT
RoHS:
Y
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220AB-3
트랜지스터 극성:
NPN
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
450 V
이미터-베이스 전압 VEBO:
9 V
수집기-이미터 포화 전압:
300 mV
최대 DC 수집기 전류:
8 A
이득 대역폭 곱 fT:
4 MHz
최소 작동 온도:
- 65 C
최대 작동 온도:
+ 150 C
시리즈:
APT1300
DC 전류 이득 hFE 최대:
35 at 1 A, 5 V
포장:
튜브
상표:
다이오드 주식회사
지속적인 수집가 전류:
4 A
DC 수집기/기본 이득 hfe 최소:
15
Pd - 전력 손실:
75 W
상품 유형:
BJT - 양극성 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
트랜지스터
단위 무게:
0.063493 oz
Tags
APT13005, APT130, APT13, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
450V 4A NPN Power Transistor TO220AB | Diodes Inc APT13005T-G1
***et
Trans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube
***i-Key
TRANS NPN 450V 4A TO220AB
***des Inc SCT
NPN, 700V, 4A, TO220AB, 75W
***emi
4.0 A, 400 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***(Formerly Allied Electronics)
Transistor, Bipolar,Si,NPN,Power,VCEO 700VDC,IC 4A,PD 2W,TO-220AB,hFE 40,fT 4MHz | ON Semiconductor MJE13005G
***ical
Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220AB Rail
***ark
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Package/Case:3-TO-220; Power Dissipation, Pd:2W; DC Current Gain Min (hfe):8; Frequency Min:75MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***th Star Micro
These devices are designed for high-voltage high-speed power switc inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators Inverters Motor Controls Solenoid/Relay drivers and Deflection circuits.
***nell
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 2W; DC Collector Current: 4A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Application Code: PHVS; Av Current Ic: 4A; Collector Emitter Saturation Voltage Vce(on): 6V; Continuous Collector Current Ic Max: 4A; Current Ic @ Vce Sat: 3A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2mA; Fall Time @ Ic: 0.9µs; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 8; No. of Transistors: 1; Operating Temperature Min: -65°C; Power Dissipation Ptot Max: 60W; Voltage Vcbo: 700V
***-Wing Technology
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 30 @ 300mA 10V 1A 2W 10MHz
***hine Compare
Bipolar Junction Transistor (BJT) NPN 400V 1A 10MHz 2W TO-220AB
***emi
1.0 A, 400 V NPN Bipolar Power Transistor
***ment14 APAC
Transistor, NPN, 400V, TO-220; Transisto; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition
***ark
Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Transition Frequency Typ, ft:10MHz; Power Dissipation, Pd:2000mW; DC Collector Current:1A; DC Current Gain Max (hfe):30; No. of Pins:3 ;RoHS Compliant: Yes
***ical
Trans GP BJT PNP 80V 4A 30000mW 3-Pin(3+Tab) TO-220AB Tube
***emi
Power Bipolar Transistor, PNP, 4.0 A, 80 V
***r Electronics
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ment14 APAC
TRANSISTOR, RF; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:30W; DC Collector Current:4A; DC Current Gain hFE:120; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Current Ic Continuous a Max:4A; Gain Bandwidth ft Typ:40MHz; Hfe Min:20; Package / Case:TO-220AB; Power Dissipation Pd:30W; Termination Type:Through Hole
부분 # 제조 설명 재고 가격
APT13005T-G1
DISTI # V36:1790_06690845		Zetex / Diodes Inc450V NPN High Voltage Power Transistor
RoHS: Compliant		0
  • 1000000:$0.2303
  • 500000:$0.2306
  • 100000:$0.2546
  • 10000:$0.2969
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1DI-ND		Diodes IncorporatedTRANS NPN 450V 4A TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.3040
APT13005T-G1
DISTI # APT13005T-G1		Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€0.2039
  • 500:€0.2069
  • 100:€0.2099
  • 50:€0.2129
  • 25:€0.2159
  • 10:€0.2199
  • 1:€0.2309
APT13005T-G1
DISTI # APT13005T-G1		Diodes IncorporatedTrans GP BJT NPN 700V 4A 3-Pin TO-220AB Tube - Rail/Tube (Alt: APT13005T-G1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.1939
  • 6000:$0.1979
  • 4000:$0.2079
  • 2000:$0.2179
  • 1000:$0.2289
APT13005T-G1
DISTI # 70550933		Diodes Incorporated450V 4A NPN Power Transistor TO220AB
RoHS: Compliant		0
  • 125:$0.4070
  • 250:$0.3630
  • 625:$0.3010
  • 1250:$0.2920
APT13005T-G1
DISTI # 621-APT13005T-G1		Diodes IncorporatedBipolar Transistors - BJT 450V NPN High Volt 700Vces 450Vceo 3.2A
RoHS: Compliant		920
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
APT13005T-G1
DISTI # 8283335P		Zetex / Diodes Inc450V 4A NPN POWER TRANSISTOR TO220AB, TU350
  • 1250:£0.2700
  • 625:£0.2950
  • 250:£0.3060
  • 125:£0.3190
영상 부분 # 설명
MC34152DG

Mfr.#: MC34152DG

OMO.#: OMO-MC34152DG

 Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
SN65176BD

Mfr.#: SN65176BD

OMO.#: OMO-SN65176BD

 RS-485 Interface IC Differential Bus
NTCALUG02A103F

Mfr.#: NTCALUG02A103F

OMO.#: OMO-NTCALUG02A103F-VISHAY

 Thermistors - NTC 10K 1% Low Therm Gradient
MC34152DG

Mfr.#: MC34152DG

OMO.#: OMO-MC34152DG-ON-SEMICONDUCTOR

 Gate Drivers 1.5A High Speed Dual Non-Inverting MOSFET
SN65176BD

Mfr.#: SN65176BD

OMO.#: OMO-SN65176BD-TEXAS-INSTRUMENTS

 RS-485 Interface IC Differential Bus
유효성
재고:
920
주문 시:
2903
수량 입력:
APT13005T-G1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.71
US$0.71
10
US$0.59
US$5.89
100
US$0.38
US$38.00
1000
US$0.30
US$304.00
시작
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