FGH40N60UFDTU

Mfr. #:: FGH40N60UFDTU
제조사:: ON Semiconductor / Fairchild
설명:: IGBT Transistors 600V 40A Field Stop
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FGH40N60UFDTU 데이터 시트
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ECAD Model:
추가 정보:: FGH40N60UFDTU 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

최대 게이트 이미터 전압:: 20 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: FGH40N60UFD

포장:: 튜브

연속 수집가 현재 IC 최대:: 80 A

키:: 20.82 mm

길이:: 15.87 mm

너비:: 4.82 mm

상표:: 온세미컨덕터 / 페어차일드

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 450

하위 카테고리:: IGBT

단위 무게:: 0.225401 oz

Tags: FGH40N60UFDT, FGH40N60UFD, FGH40N60U, FGH40N60, FGH40N6, FGH40N, FGH40, FGH4, FGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGH40N60UFDTU 설명

*** Source Electronics: Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247

***ure Electronics: FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***-Wing Technology: FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

*** Source Electronics: Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247

***ure Electronics: FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

*** Source Electronics: IGBT 600V 80A 290W TO247 / Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: FGH40N60SFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***p One Stop Global: Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3

***nell: IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te

***ical: Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube

***th Star Micro: Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,W DIODE,600V,80A,TO247AD; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AD; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

***ical: Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:

***ow.cn: Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ment14 APAC: IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

FGH40N60UFDTU 추가 정보

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

Market price

부분 #	제조	설명	재고	가격
FGH40N60UFDTU DISTI # V99:2348_06359920	ON Semiconductor	NCH ,600V, 40A, FS PLANAR IGBT	437	500:$1.7190 250:$1.9440 100:$2.0230 10:$2.3060 1:$2.6269
FGH40N60UFDTU DISTI # FGH40N60UFDTU-ND	ON Semiconductor	IGBT 600V 80A 290W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	386In Stock	1350:$1.6905 900:$2.0045 450:$2.2339 10:$2.8740 1:$3.2000
FGH40N60UFDTU DISTI # 31043773	ON Semiconductor	NCH ,600V, 40A, FS PLANAR IGBT	470	7:$1.5344
FGH40N60UFDTU DISTI # 26703280	ON Semiconductor	NCH ,600V, 40A, FS PLANAR IGBT	437	250:$1.9440 100:$2.0230 10:$2.3060 4:$2.6269
FGH40N60UFDTU DISTI # FGH40N60UFDTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FGH40N60UFDTU) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 350	450:$1.4900 452:$1.3900 902:$1.3900 2250:$1.3900 4500:$1.3900
FGH40N60UFDTU DISTI # FGH40N60UFDTU	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Rail (Alt: FGH40N60UFDTU) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.7900 10:€1.5900 25:€1.5900 50:€1.4900 100:€1.3900 500:€1.3900 1000:€1.2900
FGH40N60UFDTU DISTI # 41T0513	ON Semiconductor	IGBT,N CHANNEL,W DIODE,600V,80A,TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):600V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Product Range:-,MSL:- , RoHS Compliant: Yes	668	1:$3.2400 10:$2.7700 25:$2.6500 50:$2.5300 100:$2.4200 250:$2.2900 500:$2.0700
FGH40N60UFDTU DISTI # 512-FGH40N60UFDTU	ON Semiconductor	IGBT Transistors 600V 40A Field Stop RoHS: Compliant	565	1:$3.0500 10:$2.5900 100:$2.2500 250:$2.1300 500:$1.9100 1000:$1.6100 2500:$1.5300 5000:$1.4800
FGH40N60UFDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB RoHS: Compliant	13545	1000:$1.8800 500:$1.9800 100:$2.0600 25:$2.1500 1:$2.3200
FGH40N60UFDTU DISTI # 7599273	ON Semiconductor	TRANSISTOR IGBT N-CH 600V 80A TO247, EA	162	1:£3.8600 6:£2.4300 15:£2.3000
FGH40N60UFDTU DISTI # 7599273P	ON Semiconductor	TRANSISTOR IGBT N-CH 600V 80A TO247, TU	594	6:£2.4300 15:£2.3000
FGH40N60UFDTU DISTI # FGH40N60UFDTU	ON Semiconductor	Transistor: IGBT,600V,40A,116W,TO247	291	1:$5.4900 3:$4.7300 10:$3.8000 30:$3.4100
FGH40N60UFDTU	ON Semiconductor	INSTOCK	6685
FGH40N60UFDTU DISTI # C1S226600432155	ON Semiconductor	Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	470	120:$2.6200 60:$2.8600 30:$3.4700
FGH40N60UFDTU DISTI # 1885747	ON Semiconductor	IGBT,N CH,W DIODE,600V,80A,TO247 RoHS: Compliant	668	1:$4.8300 10:$4.1000 100:$3.5600 250:$3.3800 500:$3.0300
FGH40N60UFDTU DISTI # 1885747	ON Semiconductor	IGBT,N CH,W DIODE,600V,80A,TO247 RoHS: Compliant	668	1:£2.6500 10:£2.0000 100:£1.7300 250:£1.6400 500:£1.4700

영상	부분 #	설명
	Mfr.#: OPA207IDR OMO.#: OMO-OPA207IDR	Operational Amplifiers - Op Amps 36V HIGH PRECISION LOW NOISE/POWEROP AMP
	Mfr.#: FGH60N60UFDTU OMO.#: OMO-FGH60N60UFDTU	IGBT Transistors N-Ch/ 60A 600V FS
	Mfr.#: APT40DQ60BG OMO.#: OMO-APT40DQ60BG	Rectifiers FG, FRED, 600V, TO-247, RoHS
	Mfr.#: FFSH10120A OMO.#: OMO-FFSH10120A	Schottky Diodes & Rectifiers 1200V 10A SIC SBD
	Mfr.#: CC0603KRX7R9BB104 OMO.#: OMO-CC0603KRX7R9BB104	Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
	Mfr.#: MMA02040C3309FB300 OMO.#: OMO-MMA02040C3309FB300	MELF Resistors 0.4W 33ohms 1% 0204 MELF 200V 50ppm
	Mfr.#: AC102015 OMO.#: OMO-AC102015	Sockets & Adapters ICD4 RJ45 Universal Adapter Board
	Mfr.#: APT40DQ60BG OMO.#: OMO-APT40DQ60BG-MICROSEMI	Rectifiers
	Mfr.#: SN74HC14NS OMO.#: OMO-SN74HC14NS-TEXAS-INSTRUMENTS	LOGIC GATES AND INVERTERS
	Mfr.#: OPA207IDR OMO.#: OMO-OPA207IDR-TEXAS-INSTRUMENTS	36V HIGH PRECISION LOW NOISE/POW

FGH40N60UFDTU

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes