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FGH75T65UPD

FGH75T65UPD
Mfr. #:
FGH75T65UPD
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors 650V 150A 187W
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FGH75T65UPD 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FGH75T65UPD 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
2.3 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
150 A
Pd - 전력 손실:
187 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
FGH75T65UPD
포장:
튜브
상표:
온세미컨덕터 / 페어차일드
게이트-이미터 누설 전류:
400 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
단위 무게:
0.225401 oz
Tags
FGH75T65U, FGH75T, FGH7, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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650V, 75A, Field Stop Trench IGBT
*** Electronics
IGBT Transistors 650V 150A 187W
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N=-CH 650V 150A 455000mW Tube
***nell
IGBT, SINGLE, N-CH, 650V, 150A, TO-247-4; DC Collector Current: 150A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***ark
IGBT, SINGLE, 650V, 120A, TO-247; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
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60 A, 650 V field stop trench gate IGBT with Ultrafast diode
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Trans IGBT Chip N-CH 650V 150A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, N-CH, 650V, 150A, TO-247-3; DC Collector Current: 150A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***nell
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 395W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
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Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Rail
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FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3
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***nell
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
부분 # 제조 설명 재고 가격
FGH75T65UPD
DISTI # V99:2348_06359040		ON Semiconductor650V FIELD STOP TRENCH IGBT450
  • 1:$2.5900
FGH75T65UPD
DISTI # FGH75T65UPD-ND		ON SemiconductorIGBT 650V 150A 375W TO-247AB
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$4.0116
FGH75T65UPD-F085
DISTI # FGH75T65UPD-F085-ND		ON SemiconductorIGBT 650V 150A 375W TO-247AB
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$5.0224
FGH75T65UPD-F155
DISTI # FGH75T65UPD-F155-ND		ON Semiconductor650V,75A FIELD STOP TRENCH IGBT
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$5.3550
FGH75T65UPD
DISTI # 15004028		ON Semiconductor650V FIELD STOP TRENCH IGBT930
  • 30:$2.7570
FGH75T65UPD
DISTI # 31154998		ON Semiconductor650V FIELD STOP TRENCH IGBT450
  • 3:$2.5900
FGH75T65UPD
DISTI # FGH75T65UPD		ON SemiconductorTrans IGBT Chip N-CH 650V 150A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH75T65UPD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 600
  • 450:$2.5900
  • 900:$2.5900
  • 1800:$2.5900
  • 2700:$2.5900
  • 4500:$2.4900
FGH75T65UPD
DISTI # FGH75T65UPD		ON SemiconductorTrans IGBT Chip N-CH 650V 150A 3-Pin(3+Tab) TO-247AB Tube (Alt: FGH75T65UPD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
    FGH75T65UPD_F085
    DISTI # FGH75T65UPD-F085    		ON SemiconductorTrans IGBT Chip N-CH 650V 150A 3-Pin TO-247AB Rail - Rail/Tube (Alt: FGH75T65UPD-F085)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$3.5900
    • 900:$3.5900
    • 1800:$3.5900
    • 2700:$3.4900
    • 4500:$3.3900
    FGH75T65UPD-F155
    DISTI # FGH75T65UPD_F155    		ON SemiconductorField Stop Trench IGBT 650V 75A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH75T65UPD_F155)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
      FGH75T65UPD-F155
      DISTI # FGH75T65UPD-F155      		ON SemiconductorField Stop Trench IGBT 650V 75A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH75T65UPD-F155)
      RoHS: Compliant
      Min Qty: 450
      Container: Tube      		Americas - 0
      • 450:$3.8900
      • 900:$3.7900
      • 1800:$3.7900
      • 2700:$3.6900
      • 4500:$3.6900
      FGH75T65UPD-F085
      DISTI # 57AC1891      		ON Semiconductor 445
      • 1:$6.3200
      • 10:$5.7000
      • 25:$5.1800
      • 50:$4.8300
      • 100:$4.5000
      • 250:$3.7800
      • 500:$3.6600
      FGH75T65UPD-F155
      DISTI # 48AC1120      		ON SemiconductorFS1TIGBT TO247 75A 650V / TUBE0
      • 1:$7.8900
      • 100:$6.4500
      • 250:$5.9100
      • 500:$5.4900
      • 1000:$5.1600
      FGH75T65UPD
      DISTI # 512-FGH75T65UPD      		ON SemiconductorIGBT Transistors 650V 150A 187W
      RoHS: Compliant      		374
      • 1:$5.4700
      • 10:$4.6500
      • 100:$4.0300
      • 250:$3.8300
      FGH75T65UPD-F085
      DISTI # 512-FGH75T65UPD_F085      		ON SemiconductorIGBT Transistors 650V/75A FS TRENCH IGBT
      RoHS: Compliant      		1495
      • 1:$6.7000
      • 10:$6.0500
      • 25:$5.7700
      • 100:$5.0100
      • 250:$4.7900
      • 500:$4.3700
      • 1000:$3.8000
      FGH75T65UPD-F155
      DISTI # 512-FGH75T65UPD_F155      		ON SemiconductorIGBT Transistors 650V,75A Field Stop Trench IGBT
      RoHS: Compliant      		446
      • 1:$7.1400
      • 10:$6.4600
      • 25:$6.1600
      • 100:$5.3400
      • 250:$5.1100
      FGH75T65UPDON SemiconductorFGH75T65UPD Series 650 V 150 A 375 W Field Stop Trench IGBT - TO-247-3
      RoHS: Compliant      		450Tray
      • 30:$4.8800
      • 60:$3.9700
      • 150:$3.7900
      • 300:$3.6600
      FGH75T65UPD-F085
      DISTI # 2860235      		ON SemiconductorIGBT, AEC-Q101, 650V, 150A, TO-247
      RoHS: Compliant      		445
      • 1:£6.9600
      • 5:£6.3400
      • 10:£5.4500
      FGH75T65UPD-F085
      DISTI # 2860235      		ON SemiconductorIGBT, AEC-Q101, 650V, 150A, TO-247
      RoHS: Compliant      		445
      • 1:$11.6400
      • 5:$10.1500
      • 10:$8.7900
      • 50:$7.9100
      • 100:$6.9400
      • 250:$6.2800
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      유효성
      재고:
      184
      주문 시:
      2167
      수량 입력:
      FGH75T65UPD의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$5.46
      US$5.46
      10
      US$4.64
      US$46.40
      100
      US$4.02
      US$402.00
      250
      US$3.82
      US$955.00
      500
      US$3.42
      US$1 710.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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