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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| FMI13N60E DISTI # FE0000000000981 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI13N60ES DISTI # FE0000000000982 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI13N60ESC DISTI # FE0000000004523 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI13N60ESSC DISTI # FE0000000004524 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: FMI10N60E OMO.#: OMO-FMI10N60E-1190 |
Power Field-Effect Transisto |
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Mfr.#: FMI11N60E OMO.#: OMO-FMI11N60E-1190 |
Power Field-Effect Transistor, 11A I(D),600V,0.75ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI12N50E OMO.#: OMO-FMI12N50E-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.52ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI12N50ES OMO.#: OMO-FMI12N50ES-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI13N60E OMO.#: OMO-FMI13N60E-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI13N60ES OMO.#: OMO-FMI13N60ES-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI161JZ OMO.#: OMO-FMI161JZ-1190 |
신규 및 오리지널 |
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Mfr.#: FMI16N50E OMO.#: OMO-FMI16N50E-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N50ES OMO.#: OMO-FMI16N50ES-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N60E OMO.#: OMO-FMI16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |