IPL60R125C7AUMA1

Mfr. #:: IPL60R125C7AUMA1
제조사:: Infineon Technologies
설명:: MOSFET HIGH POWER_NEW
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPL60R125C7AUMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: IPL60R125C7AUMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: VSON-4

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 17 A

Rds On - 드레인 소스 저항:: 125 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 34 nC

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 103 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 릴

키:: 1.1 mm

길이:: 8 mm

시리즈:: CoolMOS C7

너비:: 8 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 4 ns

상품 유형:: MOSFET

상승 시간:: 4 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 45 ns

일반적인 켜기 지연 시간:: 9.6 ns

부품 번호 별칭:: IPL60R125C7 SP001385066

Tags: IPL60R12, IPL60R1, IPL60, IPL6, IPL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPL60R125C7AUMA1 설명

***ure Electronics: Single N-Channel 600 V 125 mOhm 34 nC CoolMOS Power Mosfet - ThinPak 8x8

***ark: Mosfet, N-Ch, 600V, 17A, 103W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.108Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ical: Trans MOSFET N-CH 600V 20A 4-Pin VSON EP T/R

***ark: MOSFET, N-CH, 600V, 20A, 150DEG C, 122W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***icroelectronics: N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package

***ure Electronics: N-Channel 600 V 160 mOhm Surface Mount DM2 Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 600V, 21A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 170W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

***ure Electronics: N-Channel 600 V 21.5 A 135 mOhm MDmesh M2 Power MosFet - PowerFLAT 8 x 8

***p One Stop: Trans MOSFET N-CH 600V 21.5A 4-Pin Power Flat EP T/R

***el Electronic: Flash Mem Serial 3.3V 2G-Bit 256M x 8 30us 48-Pin TSOP-I

***icroelectronics SCT: Power MOSFETs, 600V, 22A, PowerFLAT 8x8 HV, Tape and Reel

***i-Key: MOSFET N-CH 600V 22A PWRFLAT HV

***ronik: N-CH 600V 22A 115mOhm PFL8x8HV

***ure Electronics: IPB65R125C7 Series 650 V 18 A CoolMOS C7 Power Transistor - TO-263-3, D²Pak)

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 18A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO263-3, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

***ure Electronics: N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-VSON-4, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

IPL60R125C7AUMA1 추가 정보

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

부분 #	제조	설명	재고	가격
IPL60R125C7AUMA1 DISTI # V36:1790_13984890	Infineon Technologies AG	Trans MOSFET N-CH 600V 17A 4-Pin VSON EP T/R	0	3000000:$1.8900 1500000:$1.8920 300000:$2.0220 30000:$2.2320 3000:$2.2660
IPL60R125C7AUMA1 DISTI # IPL60R125C7AUMA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 17A 4VSON RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$2.2658
IPL60R125C7AUMA1 DISTI # IPL60R125C7AUMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL60R125C7AUMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	18000:$1.9900 30000:$1.9900 12000:$2.0900 6000:$2.1900 3000:$2.2900
IPL60R125C7AUMA1 DISTI # SP001385066	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001385066) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€1.7900 18000:€1.8900 12000:€1.9900 6000:€2.0900 3000:€2.1900
IPL60R125C7AUMA1 DISTI # 84AC6834	Infineon Technologies AG	MOSFET, N-CH, 600V, 17A, 103W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	0	1000:$2.2900 500:$2.7200 250:$3.0300 100:$3.1900 50:$3.3600 25:$3.5200 10:$3.6900 1:$4.3300
IPL60R125C7AUMA1 DISTI # 726-IPL60R125C7AUMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$4.2900 10:$3.6500 100:$3.1600 250:$3.0000 500:$2.6900 1000:$2.2700 3000:$2.1500
IPL60R125C7AUMA1 DISTI # 2983364	Infineon Technologies AG	MOSFET, N-CH, 600V, 17A, 103W, VSON RoHS: Compliant	3000	250:$3.2500 100:$3.4700 25:$4.0500 1:$4.8500
IPL60R125C7AUMA1 DISTI # 2983364	Infineon Technologies AG	MOSFET, N-CH, 600V, 17A, 103W, VSON	3000	100:£2.6900 10:£3.1200 1:£4.0900

영상	부분 #	설명
	Mfr.#: IPL60R125C7AUMA1 OMO.#: OMO-IPL60R125C7AUMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPL60R125P7AUMA1 OMO.#: OMO-IPL60R125P7AUMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPL60R125P7AUMA1 OMO.#: OMO-IPL60R125P7AUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 4VSON
	Mfr.#: IPL60R125P7 OMO.#: OMO-IPL60R125P7-1190	Transistor MOSFET N-CH 650V 27A 4-Pin VSON T/R (Alt: IPL60R125P7)
	Mfr.#: IPL60R125C7AUMA1 OMO.#: OMO-IPL60R125C7AUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 17A 4VSON

IPL60R125C7AUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes