A3T21H360W23SR6

Mfr. #:: A3T21H360W23SR6
제조사:: NXP Semiconductors
설명:: RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A3T21H360W23SR6 데이터 시트
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ECAD Model:
추가 정보:: A3T21H360W23SR6 추가 정보 A3T21H360W23SR6 Product Details

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: 듀얼 N-채널

기술:: 시

Id - 연속 드레인 전류:: 2.4 A

Vds - 드레인 소스 항복 전압:: - 500 mV, 65 V

얻다:: 16.4 dB

출력 파워:: 56 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: ACP-1230S-4L2S

포장:: 릴

동작 주파수:: 2110 MHz to 2200 MHz

유형:: RF 전력 MOSFET

상표:: NXP반도체

채널 수:: 2 Channel

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 150

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 6 V, 10 V

Vgs th - 게이트 소스 임계 전압:: 1.4 V

부품 번호 별칭:: 935354511128

단위 무게:: 0.212656 oz

Tags: A3T21, A3T2, A3T

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A3T21H360W23SR6 추가 정보

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

Market price

부분 #	제조	설명	재고	가격
A3T21H360W23SR6 DISTI # V36:1790_18998405	NXP Semiconductors	RF POWER TRANSISTOR	0	150000:$86.5700 75000:$86.5800 15000:$89.1500 1500:$95.5300 150:$96.7200
A3T21H360W23SR6 DISTI # A3T21H360W23SR6-ND	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTO RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$96.7176
A3T21H360W23SR6 DISTI # A3T21H360W23SR6	Avnet, Inc.	RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 28 V 600 mA 56 W 4-Pin ACP-1230S T/R - Tape and Reel (Alt: A3T21H360W23SR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	1500:$92.4900 900:$94.2900 600:$97.7900 300:$101.7900 150:$105.9900
A3T21H360W23SR6 DISTI # 771-A3T21H360W23SR6	NXP Semiconductors	RF MOSFET Transistors A3T21H360W23S/CFM6F///REEL 13 Q2 NDP RoHS: Compliant	0	1:$116.3600 5:$114.2200 10:$109.0800 25:$105.4400 100:$98.1800 150:$89.9700
A3T21H360W23SR6 DISTI # A3T21H360W23SR6	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	150:$109.0800

A3T21H360W23SR6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes