SI7272DP-T1-GE3

Name: Vishay - SI7272DP-T1-GE3
Brand: Vishay
SKU: OMO-2823373
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI7272DP-T1-GE3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 30V 25A 22W 9.3mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI7272DP-T1-GE3 데이터 시트
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ECAD Model:
추가 정보:: SI7272DP-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI7272DP-GE3

단위 무게: 0.017870 oz

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR SO-8 Dual

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: PowerPAKR SO-8 Dual

구성: 듀얼 듀얼 드레인

FET형: 2 N-Channel (Dual)

파워맥스: 22W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 1100pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 25A

Rds-On-Max-Id-Vgs: 9.3 mOhm @ 15A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 26nC @ 10V

Pd 전력 손실: 3.6 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns

상승 시간: 15 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 15 A

Vds-드레인-소스-고장-전압: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 9.3 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 22 ns

일반 켜기 지연 시간: 20 ns

Qg-Gate-Charge: 17 nC

채널 모드: 상승

Tags: Si72, SI7

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7272DP-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SI7272DP-T1-GE3 DISTI # V72:2272_09215638	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R RoHS: Compliant	134	100:$0.8328 25:$1.0344 10:$1.0461 1:$1.2245
SI7272DP-T1-GE3 DISTI # SI7272DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3235In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SI7272DP-T1-GE3 DISTI # SI7272DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3235In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SI7272DP-T1-GE3 DISTI # SI7272DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.6622
SI7272DP-T1-GE3 DISTI # 28955593	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R RoHS: Compliant	134	100:$0.8324 25:$1.0339 11:$1.0457
SI7272DP-T1-GE3 DISTI # SI7272DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R (Alt: SI7272DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7272DP-T1-GE3 DISTI # SI7272DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7272DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.6249 6000:$0.6069 12000:$0.5819 18000:$0.5659 30000:$0.5509
SI7272DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R - Tape and Reel RoHS: Compliant Container: Reel	Americas - 0
SI7272DP-T1-GE3 DISTI # 01AC5004	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0076ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,RoHS Compliant: Yes	3799	1:$1.5100 10:$1.2400 25:$1.1400 50:$1.0500 100:$0.9510 250:$0.8850 500:$0.8180
SI7272DP-T1-GE3 DISTI # 15R5187	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 30V, 25A, POWERPAK SO-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0076ohm,Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes	0	1:$0.6020 3000:$0.5870 6000:$0.5720 12000:$0.5510
SI7272DP-T1-GE3. DISTI # 28AC2162	Vishay Intertechnologies	DUAL N-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: YES	0	1:$0.6020 3000:$0.5870 6000:$0.5720 12000:$0.5510
SI7272DP-T1-GE3 DISTI # 781-SI7272DP-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	233	1:$1.5100 10:$1.2400 100:$0.9510 500:$0.8180 1000:$0.6450 3000:$0.6020 6000:$0.5720 9000:$0.5510
SI7272DP-T1-GE3	Vishay Siliconix	POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 30V, 0.0093OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	132	61:$0.5880 13:$0.8400 1:$1.6800
SI7272DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - 18000
SI7272DP-T1-GE3 DISTI # 2646391	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO RoHS: Compliant	64	5:£1.0300 50:£0.9350 100:£0.7190 500:£0.6160 1500:£0.5130
SI7272DP-T1-GE3 DISTI # 2646391	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO RoHS: Compliant	3799	1:$2.4000 10:$1.9700 100:$1.5100 500:$1.3000 1000:$1.0300 3000:$0.9600
SI7272DP-T1-GE3 DISTI # 2679701	Vishay Intertechnologies	MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO RoHS: Compliant	0	3000:$1.0600

SI7272DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes