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AS4C512M8D3LB-12BANTR

AS4C512M8D3LB-12BANTR
Mfr. #:
AS4C512M8D3LB-12BANTR
제조사:
Alliance Memory
설명:
DRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
AS4C512M8D3LB-12BANTR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
AS4C512M8D3LB-12BANTR 추가 정보
제품 속성
속성 값
제조사:
얼라이언스 메모리
제품 카테고리:
적은 양
RoHS:
Y
유형:
SDRAM - DDR3L
데이터 버스 폭:
8 bit
조직:
512 M x 8
패키지/케이스:
FBGA-78
메모리 크기:
4 Gbit
최대 클록 주파수:
800 MHz
액세스 시간:
12 ns
공급 전압 - 최대:
1.45 V
공급 전압 - 최소:
1.283 V
공급 전류 - 최대:
60 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 105 C
시리즈:
AS4C512M8D3LB-12
포장:
릴
상표:
얼라이언스 메모리
장착 스타일:
SMD/SMT
습기에 민감한:
네
상품 유형:
적은 양
공장 팩 수량:
2500
하위 카테고리:
메모리 및 데이터 저장
Tags
AS4C512M8D3LB-12, AS4C512M8D3LB, AS4C512M8D3L, AS4C512M8, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***t
    V***t
    DE

    All bestens. Danke.

    2019-04-05
    P***v
    P***v
    RU

    All ok!

    2019-04-18
    R***a
    R***a
    RU

    Diodes came, in appearance everything is fine.

    2019-09-14
***et
DRAM Chip DDR3 SDRAM 4Gbit 512M X 8 78-Pin FBGA T/R
***i-Key
IC DRAM 4G PARALLEL 78FBGA
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
부분 # 제조 설명 재고 가격
AS4C512M8D3LB-12BANTR
DISTI # AS4C512M8D3LB-12BANTR-ND		Alliance Memory IncIC DRAM 4G PARALLEL 78FBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$9.3895
AS4C512M8D3LB-12BANTR
DISTI # AS4C512M8D3LB-12BANTR		Alliance Memory IncDRAM Chip DDR3 SDRAM 4Gbit 512M X 8 78-Pin FBGA T/R - Tape and Reel (Alt: AS4C512M8D3LB-12BANTR)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$8.4900
  • 15000:$8.6900
  • 10000:$8.8900
  • 5000:$9.1900
  • 2500:$9.3900
AS4C512M8D3LB-12BAN
DISTI # 913-A4C5128D3LB12BAN		Alliance Memory IncDRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp
RoHS: Compliant		424
  • 1:$14.0400
  • 10:$13.0000
  • 25:$12.8300
  • 50:$12.6700
  • 100:$11.1000
  • 250:$10.6200
  • 500:$10.2700
AS4C512M8D3LB-12BANTR
DISTI # 913-4C5128D3LB12BANT		Alliance Memory IncDRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp
RoHS: Compliant		0
  • 2500:$9.8400
영상 부분 # 설명
AS4C512M8D3LB-10BCNTR

Mfr.#: AS4C512M8D3LB-10BCNTR

OMO.#: OMO-AS4C512M8D3LB-10BCNTR

 DRAM 4G - B DIE - 10NS OPTION 512M x 8 1.35V 933MHz DDR3-1866bps/pin Commercial (Extended) (0 95 C) 78-ball FBGA
AS4C512M8D3LA-12BCN

Mfr.#: AS4C512M8D3LA-12BCN

OMO.#: OMO-AS4C512M8D3LA-12BCN

 DRAM 4G 1.35V 800MHz 512M x 8 DDR3
AS4C512M8D3L-12BCNTR

Mfr.#: AS4C512M8D3L-12BCNTR

OMO.#: OMO-AS4C512M8D3L-12BCNTR

 DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
AS4C512M8D3LA-12BIN

Mfr.#: AS4C512M8D3LA-12BIN

OMO.#: OMO-AS4C512M8D3LA-12BIN

 DRAM 4G 1.35V 800MHz 512M x 8 DDR3
AS4C512M8D3-12BANTR

Mfr.#: AS4C512M8D3-12BANTR

OMO.#: OMO-AS4C512M8D3-12BANTR-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100
AS4C512M8D3L-12BINTR

Mfr.#: AS4C512M8D3L-12BINTR

OMO.#: OMO-AS4C512M8D3L-12BINTR-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA
AS4C512M8D3-12BCN

Mfr.#: AS4C512M8D3-12BCN

OMO.#: OMO-AS4C512M8D3-12BCN-ALLIANCE-MEMORY

 DRAM 4G, 1.5V, 1600Mhz 512M x 8 DDR3
AS4C512M8D3B-12BAN

Mfr.#: AS4C512M8D3B-12BAN

OMO.#: OMO-AS4C512M8D3B-12BAN-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100
AS4C512M8D3LA-12BCNTR

Mfr.#: AS4C512M8D3LA-12BCNTR

OMO.#: OMO-AS4C512M8D3LA-12BCNTR-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA
AS4C512M8D3LB-12BCNTR

Mfr.#: AS4C512M8D3LB-12BCNTR

OMO.#: OMO-AS4C512M8D3LB-12BCNTR-ALLIANCE-MEMORY

 IC DRAM 4G PARALLEL 78FBGA
유효성
재고:
Available
주문 시:
4500
수량 입력:
AS4C512M8D3LB-12BANTR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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