AS4C512M16D3LA-12BINTR

AS4C512M16D3LA-12BINTR
Mfr. #:
AS4C512M16D3LA-12BINTR
제조사:
Alliance Memory
설명:
DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
AS4C512M16D3LA-12BINTR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
AS4C512M16D3LA-12BINTR 추가 정보
제품 속성
속성 값
제조사:
얼라이언스 메모리
제품 카테고리:
적은 양
RoHS:
Y
유형:
SDRAM - DDR3L
데이터 버스 폭:
16 bit
조직:
512 M x 16
패키지/케이스:
FBGA-96
메모리 크기:
8 Gbit
최대 클록 주파수:
800 MHz
공급 전압 - 최대:
1.45 V
공급 전압 - 최소:
1.283 V
공급 전류 - 최대:
88 mA
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 95 C
시리즈:
AS4C512M16D3LA
포장:
상표:
얼라이언스 메모리
장착 스타일:
SMD/SMT
습기에 민감한:
상품 유형:
적은 양
공장 팩 수량:
2000
하위 카테고리:
메모리 및 데이터 저장
Tags
AS4C512M16D3LA-12, AS4C512M16D3LA, AS4C512M1, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
영상 부분 # 설명
AS4C512M16D3LB-12BCNTR

Mfr.#: AS4C512M16D3LB-12BCNTR

OMO.#: OMO-AS4C512M16D3LB-12BCNTR

DRAM 8G - Dual Die Package (DDP) -12 512M x 16 1.35V(1.283-1.45V) 800MHz DDR3-1600bps/pin Commercial (Extended) (0 95 C) 96-ball FBGA
AS4C512M16D3LA-10BINTR

Mfr.#: AS4C512M16D3LA-10BINTR

OMO.#: OMO-AS4C512M16D3LA-10BINTR

DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
AS4C512M16D3LA-12BIN

Mfr.#: AS4C512M16D3LA-12BIN

OMO.#: OMO-AS4C512M16D3LA-12BIN

DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3LA-12BCNTR

Mfr.#: AS4C512M16D3LA-12BCNTR

OMO.#: OMO-AS4C512M16D3LA-12BCNTR

DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-12BINTR

Mfr.#: AS4C512M16D3LA-12BINTR

OMO.#: OMO-AS4C512M16D3LA-12BINTR

DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3LA-10BCN

Mfr.#: AS4C512M16D3LA-10BCN

OMO.#: OMO-AS4C512M16D3LA-10BCN

DRAM 8G 512Mx16 933MHz 1.35V DDR3 ET
AS4C512M16D3LA-10BIN

Mfr.#: AS4C512M16D3LA-10BIN

OMO.#: OMO-AS4C512M16D3LA-10BIN

DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
AS4C512M16D3L-12BCN

Mfr.#: AS4C512M16D3L-12BCN

OMO.#: OMO-AS4C512M16D3L-12BCN

DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
AS4C512M16D3LB-12BCN

Mfr.#: AS4C512M16D3LB-12BCN

OMO.#: OMO-AS4C512M16D3LB-12BCN

DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, 0 C to 95 C
AS4C512M16D3L-12BCN

Mfr.#: AS4C512M16D3L-12BCN

OMO.#: OMO-AS4C512M16D3L-12BCN-ALLIANCE-MEMORY

IC DRAM 8G PARALLEL 96FBGA
유효성
재고:
Available
주문 시:
3500
수량 입력:
AS4C512M16D3LA-12BINTR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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