OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

IXFX360N15T2

IXFX360N15T2
Mfr. #:
IXFX360N15T2
제조사:
Littelfuse
설명:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFX360N15T2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IXFX360N15T2 추가 정보
제품 속성
속성 값
제조사
익시스
제품 카테고리
FET - 단일
시리즈
기가모스
제품
MOSFET 게이트 드라이버
유형
GigaMOS Trench T2 HiperFet
포장
튜브
장착 스타일
구멍을 통해
상표명
HiPerFET
패키지 케이스
PLUS-247
작동 온도
-55°C ~ 175°C (TJ)
장착형
구멍을 통해
공급자-장치-패키지
PLUS247-3
출력 수
1
FET형
MOSFET N-채널, 금속 산화물
파워맥스
1670W
드레인-소스 전압 Vdss
150V
입력-커패시턴스-Ciss-Vds
47500pF @ 25V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
360A (Tc)
Rds-On-Max-Id-Vgs
4 mOhm @ 60A, 10V
Vgs-th-Max-Id
5V @ 8mA
Gate-Charge-Qg-Vgs
715nC @ 10V
Pd 전력 손실
1670 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
출력 전압
150 V
운영-공급-전류
100 A
출력 전류
360 A
가을철
265 ns
상승 시간
170 ns
드라이버 수
1 Driver
최대 꺼짐 지연 시간
115 ns
최대 켜기 지연 시간
50 ns
Tags
IXFX3, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 150V 360A PLUS247
***ure Electronics
150V 360A 0.004 Ohm N-Ch PLUS247 HiperFET
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
부분 # 제조 설명 재고 가격
IXFX360N15T2
DISTI # V99:2348_15878492		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 500:$12.8800
  • 250:$14.6000
  • 100:$16.8000
  • 50:$17.2300
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # IXFX360N15T2-ND		IXYS CorporationMOSFET N-CH 150V 360A PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 120:$18.3707
  • 30:$19.7660
  • 1:$23.2500
IXFX360N15T2
DISTI # 30695442		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
IXFX360N15T2
DISTI # 747-IXFX360N15T2		IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		73
  • 1:$24.3100
  • 5:$23.7600
  • 10:$22.4900
  • 25:$21.1400
  • 50:$19.5600
  • 100:$19.2100
  • 250:$16.3800
  • 500:$14.2700
IXFX360N15T2
DISTI # C1S331700117829		IXYS CorporationTrans MOSFET N-CH 150V 360A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant		30
  • 25:$18.5400
  • 10:$19.6900
  • 5:$20.8000
  • 1:$21.4200
영상 부분 # 설명
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
IXFX360N15T2

Mfr.#: IXFX360N15T2

OMO.#: OMO-IXFX360N15T2-IXYS-CORPORATION

 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFX360N10T

Mfr.#: IXFX360N10T

OMO.#: OMO-IXFX360N10T-IXYS-CORPORATION

 MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
유효성
재고:
Available
주문 시:
4000
수량 입력:
IXFX360N15T2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$19.32
US$19.32
10
US$18.35
US$183.54
100
US$17.39
US$1 738.80
500
US$16.42
US$8 211.00
1000
US$15.46
US$15 456.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
최신 제품
More Newest Products
Top