OMO ElectronicOMO Electronic
Expand menu
0 카트

IXTP05N100P

IXTP05N100P
Mfr. #:
IXTP05N100P
제조사:
Littelfuse
설명:
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXTP05N100P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP05N100P DatasheetIXTP05N100P Datasheet (P4-P6)
ECAD Model:
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1 kV
Id - 연속 드레인 전류:
500 mA
Rds On - 드레인 소스 저항:
30 Ohms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
8.1 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
50 W
구성:
하나의
채널 모드:
상승
포장:
튜브
제품:
MOSFET
시리즈:
IXTP05N100
트랜지스터 유형:
1 N-Channel
상표:
익시스
가을 시간:
15 ns
상품 유형:
MOSFET
상승 시간:
15 ns
공장 팩 수량:
50
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
20 ns
일반적인 켜기 지연 시간:
6 ns
단위 무게:
0.012346 oz
Tags
IXTP05, IXTP0, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
***i-Key
MOSFET N-CH 1000V 500MA TO220AB
***roFlash
Mosfet Transistor, N Channel, 6.5 A, 1 Kv, 1.6 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***ser
Power MOSFET Transistors N-Ch 1000 V 1.6 Ohm 6.5 A SuperMESH
***icroelectronics
N-CHANNEL 1000V - 1.60Ohm - 6.5A - TO-220 - TO-220FP
***ical
Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CH, 1000V, 6.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-CHANNEL 1000V - 3 Ohm - 3.5A - TO-220FP ZENER-PROTECTED SUPERMESH MOSFET
***roFlash
Mosfet Transistor, N Channel, 1.75 A, 1 Kv, 2.7 Ohm, 30 V, 3.75 V Rohs Compliant: Yes
***ure Electronics
N-Channel 1000 V 3.7 Ohm SuperMESH3 Power MosFet TO-220FP
***nell
MOSFET, N CH, 1KV, 3.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.75A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; P
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
Trans MOSFET N-CH 1KV 2.5A 3-Pin(3+Tab) TO-220FP Tube
***icroelectronics
N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
***ure Electronics
N-channel 1000 V 6 Ohm 25 W Through Hole SuperMESH™ Power Mosfet - TO-220FP
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 1KV, 2.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
***hard Electronics
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
***Yang
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
***ure Electronics
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
***enic
900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
부분 # 제조 설명 재고 가격
IXTP05N100P
DISTI # IXTP05N100P-ND		IXYS CorporationMOSFET N-CH 1000V 500MA TO-263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$1.8700
IXTP05N100P
DISTI # 747-IXTP05N100P		IXYS CorporationMOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
RoHS: Compliant		0
  • 1:$2.4200
  • 10:$2.1900
  • 25:$1.9100
  • 50:$1.7900
  • 100:$1.7600
  • 250:$1.4300
  • 500:$1.3700
  • 1000:$1.1300
  • 2500:$0.9520
영상 부분 # 설명
IXTP01N100D

Mfr.#: IXTP01N100D

OMO.#: OMO-IXTP01N100D

 MOSFET 0.1 Amps 1000V 110 Rds
IXTP08N100P

Mfr.#: IXTP08N100P

OMO.#: OMO-IXTP08N100P

 MOSFET 0.8 Amps 1000V 20 Rds
IXTP02N120P

Mfr.#: IXTP02N120P

OMO.#: OMO-IXTP02N120P

 MOSFET 500V to 1200V Polar Power MOSFET
IXTP05N100

Mfr.#: IXTP05N100

OMO.#: OMO-IXTP05N100

 MOSFET 0.75 Amps 1000V 15 Rds
IXTP08N120P

Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P

 MOSFET 0.8 Amps 1200V 25 Rds
IXTP08N120P

Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P-IXYS-CORPORATION

 MOSFET N-CH 1200V 800MA TO-220
IXTP05N100M

Mfr.#: IXTP05N100M

OMO.#: OMO-IXTP05N100M-IXYS-CORPORATION

 Darlington Transistors MOSFET 0.5 Amps 1000V
IXTP05N100

Mfr.#: IXTP05N100

OMO.#: OMO-IXTP05N100-IXYS-CORPORATION

 IGBT Transistors MOSFET 0.75 Amps 1000V 15 Rds
IXTP02N120P

Mfr.#: IXTP02N120P

OMO.#: OMO-IXTP02N120P-IXYS-CORPORATION

 IGBT Transistors MOSFET 500V to 1200V Polar Power MOSFET
IXTP08N100P

Mfr.#: IXTP08N100P

OMO.#: OMO-IXTP08N100P-IXYS-CORPORATION

 IGBT Transistors MOSFET 0.8 Amps 1000V 20 Rds
유효성
재고:
Available
주문 시:
4000
수량 입력:
IXTP05N100P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.42
US$2.42
10
US$2.19
US$21.90
25
US$1.91
US$47.75
50
US$1.79
US$89.50
100
US$1.76
US$176.00
250
US$1.43
US$357.50
500
US$1.37
US$685.00
1000
US$1.13
US$1 130.00
2500
US$0.95
US$2 380.00
시작
최신 제품
More Newest Products
Top