IRG4IBC20WPBF

Mfr. #:: IRG4IBC20WPBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 600V Warp 60-150kHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRG4IBC20WPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRG4IBC20WPBF Datasheet IRG4IBC20WPBF Datasheet (P4-P6)IRG4IBC20WPBF Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-220FP-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 2.16 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 12 A

Pd - 전력 손실:: 34 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

포장:: 튜브

연속 수집가 현재 IC 최대:: 12 A

키:: 9.1 mm

길이:: 10.6 mm

너비:: 4.8 mm

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 2000

하위 카테고리:: IGBT

부품 번호 별칭:: SP001537234

단위 무게:: 0.081130 oz

Tags: IRG4IBC20W, IRG4IBC2, IRG4IBC, IRG4IB, IRG4I, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4IBC20WPBF 설명

***ical: Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak

***ied Electronics & Automation: 600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11.8A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:34W; Package/Case:TO-220 ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 600V, 11.8A, TO-220FP; Transistor Type:IGBT; DC Collector Current:11.8A; Collector Emitter Voltage Vces:2.16V; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:11.8A; Current Temperature:25°C; Device Marking:IRG4IBC20WPbF; Fall Time Typ:64ns; Fall Time tf:64ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:34W; Power Dissipation Pd:34W; Power Dissipation Pd:34W; Pulsed Current Icm:52A; Rise Time:14ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

부분 #	제조	설명	재고	가격
IRG4IBC20WPBF DISTI # IRG4IBC20WPBF-ND	Infineon Technologies AG	IGBT 600V 12A 34W TO220FP RoHS: Compliant Min Qty: 2000 Container: Tube	Limited Supply - Call
IRG4IBC20WPBF DISTI # IRG4IBC20WPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak - Bulk (Alt: IRG4IBC20WPBF) Min Qty: 329 Container: Bulk	Americas - 0	3290:$0.9659 1645:$0.9849 987:$1.0239 658:$1.0639 329:$1.1089
IRG4IBC20WPBF DISTI # 70018444	Infineon Technologies AG	600V Warp 60-150 kHz Discrete IGBT IN A TO-220 FULLPAK Package RoHS: Compliant	0	350:$2.2300
IRG4IBC20WPBF DISTI # 942-IRG4IBC20WPBF	Infineon Technologies AG	IGBT Transistors 600V Warp 60-150kHz RoHS: Compliant	0
IRG4IBC20WPBF	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	447	1000:$1.0000 500:$1.0500 100:$1.1000 25:$1.1400 1:$1.2300
IRG4IBC20WPBF	International Rectifier	Insulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	10	1000:$1.0000 500:$1.0500 100:$1.1000 25:$1.1400 1:$1.2300
IRG4IBC20WPBF DISTI # 8650454	Infineon Technologies AG	IGBT, 600V, 11.8A, TO-220FP RoHS: Compliant	0	1000:$1.7100 500:$2.0500 100:$2.3500 10:$2.9200 1:$3.4500

관련 상품

영상	부분 #	설명
	Mfr.#: IRG4IBC30KDPBF OMO.#: OMO-IRG4IBC30KDPBF	IGBT Transistors 600V UltraFast 8-25kHz
	Mfr.#: IRG4IBC20FDPBF OMO.#: OMO-IRG4IBC20FDPBF	IGBT Transistors 600V Fast 1-8kHz
	Mfr.#: IRG4IBC20WPBF OMO.#: OMO-IRG4IBC20WPBF	IGBT Transistors 600V Warp 60-150kHz
	Mfr.#: IRG4IBC20FDPBF OMO.#: OMO-IRG4IBC20FDPBF-INFINEON-TECHNOLOGIES	IGBT 600V 14.3A 34W TO220FP
	Mfr.#: IRG4IBC20KDPBF OMO.#: OMO-IRG4IBC20KDPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 600V UltraFast 8-25kHz
	Mfr.#: IRG4IBC30WPBF OMO.#: OMO-IRG4IBC30WPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 600V Warp 60-150kHz
	Mfr.#: IRG4IBC10UDPBF OMO.#: OMO-IRG4IBC10UDPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 600V UltraFast 8-60kHz
	Mfr.#: IRG4IBC10UD OMO.#: OMO-IRG4IBC10UD-INFINEON-TECHNOLOGIES	IGBT 600V 6.8A 25W TO220FP
	Mfr.#: IRG4IBC30KDPBF. OMO.#: OMO-IRG4IBC30KDPBF--1190	DC Collector Current:17A, Collector Emitter Saturation Voltage Vce(on):2.88V, Power Dissipation Pd:45W, Collector Emitter Voltage V(br)ceo:600V, No. of Pins:3Pins, Operating Temperature Max:150°C
	Mfr.#: IRG4IBC30WPBF. OMO.#: OMO-IRG4IBC30WPBF--1190	신규 및 오리지널