SI3588DV-T1-E3

Mfr. #:: SI3588DV-T1-E3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 20V 3.0/2.2A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI3588DV-T1-E3 데이터 시트
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HTML Datasheet:: SI3588DV-T1-E3 Datasheet SI3588DV-T1-E3 Datasheet (P4-P6)SI3588DV-T1-E3 Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: 디지릴R

부분 별칭: SI3588DV-E3

단위 무게: 0.000705 oz

장착 스타일: SMD/SMT

상표명: TrenchFET

패키지 케이스: SOT-23-6 Thin, TSOT-23-6

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 6-TSOP

구성: 1 N-Channel 1 P-Channel

FET형: N 및 P-채널

파워맥스: 830mW, 83mW

트랜지스터형: 1 N-Channel 1 P-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 2.5A, 570mA

Rds-On-Max-Id-Vgs: 80 mOhm @ 3A, 4.5V

Vgs-th-Max-Id: 450mV @ 250μA (Min)

Gate-Charge-Qg-Vgs: 7.5nC @ 4.5V

Pd 전력 손실: 830 mW

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 30 ns 29 ns

상승 시간: 30 ns 29 ns

Vgs 게이트 소스 전압: 8 V

Id-연속-드레인-전류: 2.5 A

Vds-드레인-소스-고장-전압: 20 V

Rds-On-Drain-Source-Resistance: 80 mOhms 145 mOhms

트랜지스터 극성: N-채널 P-채널

일반 꺼짐 지연 시간: 28 ns 24 ns

일반 켜기 지연 시간: 12 ns 12 ns

채널 모드: 상승

Tags: SI3588D, SI3588, SI358, SI35, SI3

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3588DV-T1-E3 설명

***ical: Trans MOSFET N/P-CH 20V 2.5A/0.57A 6-Pin TSOP T/R

***i-Key: MOSFET N/P-CH 20V 2.5A 6TSOP

***ser: Dual MOSFETs 20V 3.0/2.2A

***nell: MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:Dual N / P Channel; Voltage, Vds Typ:20V; Current, Id Cont:3A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:4.5V; Case Style:TSOP-6

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TSOP-6 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, TSOP-6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:450mV; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:TSOP-6; Power Dissipation Pd:830mW; Voltage Vds Typ:20V; Voltage Vgs Max:450mV; Voltage Vgs Rds on Measurement:4.5V

Market price

부분 #	제조	설명	재고	가격
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI3588DV-T1-E3 DISTI # 781-SI3588DV-E3	Vishay Intertechnologies	MOSFET 20V 3.0/2.2A RoHS: Compliant	0
SI3588DV-T1-E3 DISTI # 1612643RL	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320
SI3588DV-T1-E3 DISTI # 1612643	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320

영상	부분 #	설명
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3	MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
	Mfr.#: SI3588DV-T1-E3 OMO.#: OMO-SI3588DV-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 3.0/2.2A
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3-VISHAY	MOSFET N/P-CH 20V 2.5A 6-TSOP
	Mfr.#: SI3588DV-T1E3 OMO.#: OMO-SI3588DV-T1E3-1190	신규 및 오리지널

SI3588DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes