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SIHG30N60E-E3

SIHG30N60E-E3
Mfr. #:
SIHG30N60E-E3
제조사:
Vishay / Siliconix
설명:
MOSFET 600V Vds 30V Vgs TO-247AC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHG30N60E-E3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG30N60E-E3 DatasheetSIHG30N60E-E3 Datasheet (P4-P6)SIHG30N60E-E3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SIHG30N60E-E3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247AC-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
29 A
Rds On - 드레인 소스 저항:
125 mOhms
Vgs th - 게이트 소스 임계 전압:
4 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
85 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
250 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
E
상표:
비쉐이 / 실리콘닉스
가을 시간:
36 ns
상품 유형:
MOSFET
상승 시간:
32 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
63 ns
일반적인 켜기 지연 시간:
19 ns
단위 무게:
1.340411 oz
Tags
SIHG30N60E, SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
***ure Electronics
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-247AC
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
***o-Tech
MOSFET N-Channel 600V 29A TO247AC
***nell
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHG30N60E-E3
DISTI # SIHG30N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO247AC
Min Qty: 1
Container: Tube		499In Stock
  • 100:$4.4850
  • 25:$5.1752
  • 10:$5.4740
  • 1:$6.1000
SIHG30N60E-E3
DISTI # SIHG30N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG30N60E-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$2.8900
  • 3000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
  • 500:$3.2900
SIHG30N60E-E3
DISTI # 781-SIHG30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		327
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$4.1900
  • 1000:$3.5900
  • 2500:$3.0500
SIHG30N60E-GE3
DISTI # 78-SIHG30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		25
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
SIHG30N60E-E3Vishay Intertechnologies 100
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    TL103WIDR

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    OMO.#: OMO-TL103WIDR-TEXAS-INSTRUMENTS

    		 Operational Amplifiers - Op Amps Dual OpAmp w/Internal Reference
    유효성
    재고:
    327
    주문 시:
    2310
    수량 입력:
    SIHG30N60E-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$6.44
    US$6.44
    10
    US$5.33
    US$53.30
    100
    US$4.39
    US$439.00
    250
    US$4.25
    US$1 062.50
    500
    US$4.19
    US$2 095.00
    1000
    US$3.59
    US$3 590.00
    2500
    US$3.05
    US$7 625.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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