IRFS4115-7PPBF

Mfr. #:: IRFS4115-7PPBF
제조사:: Infineon Technologies
설명:: MOSFET N-CH 150V 105A D2PAK-7
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFS4115-7PPBF 데이터 시트
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HTML Datasheet:: IRFS4115-7PPBF Datasheet IRFS4115-7PPBF Datasheet (P4-P6)IRFS4115-7PPBF Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사: IR

제품 카테고리: FET - 단일

포장: 튜브

단위 무게: 0.056438 oz

장착 스타일: SMD/SMT

패키지 케이스: TO-263-7

기술: 시

채널 수: 1 Channel

트랜지스터형: 1 N-Channel

Pd 전력 손실: 380 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

가을철: 23 ns

상승 시간: 50 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 105 A

Vds-드레인-소스-고장-전압: 150 V

Vgs-th-Gate-Source-Threshold-Voltage: 5 V

Rds-On-Drain-Source-Resistance: 10 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 37 ns

일반 켜기 지연 시간: 18 ns

Qg-Gate-Charge: 73 nC

순방향 트랜스컨덕턴스-최소: 93 S

Tags: IRFS411, IRFS41, IRFS4, IRFS, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFS4115-7PPBF 설명

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS

***(Formerly Allied Electronics): MOSFET, 150V, 105A, 11.8 mOhm, 73 nC Qg, D2PAK-7

***et: Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 380 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***ment14 APAC: MOSFET, N-CH 150V 105A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Package / Case:D2-PAK-7; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

***ure Electronics: Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7

*** Source Electronics: Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK T/R / MOSFET N-CH 150V 105A D2PAK-7

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS

***nell: MOSFET, N-CH, 150V, 105A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 105A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

***ure Electronics: Single N-Channel 150 V 14.7 mOhm 71 nC HEXFET® Power Mosfet - D2PAK-7

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS

***Yang: Trans MOSFET N-CH 150V 86A 7-Pin D2PAK T/R - Tape and Reel

***ineon: Benefits: Low Rdson Reduces Losses; Low Gate Charge Improves the Switching Performance; Improved Diode Recovery Improves Switching and EMI Performance; 30V Gate Voltage Rating Improves Robustness; Fully Characterized Avalanche SOA | Target Applications: Battery Operated Drive

***ineon SCT: Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS

***et: Trans MOSFET N-CH 150V 105A 7-Pin D2PAK Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50Volts C0G +/-0.25pF

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.0118Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes

***icroelectronics: N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package

***r Electronics: Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 100V 110A 7-Pin(6+Tab) H2PAK T/R

*** Electronic Components: MOSFET N-CH 100V 49mOhm 110A STripFET VII

***el Electronic: CAP CERAMIC DISK RDL LONG LEADS

***emi: N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ

***et: N-Channel 150V 130A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D²PAK (TO-263)

***r Electronics: Power Field-Effect Transistor, 130A I(D), 150V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

***icroelectronics: Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET

***ical: Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) H2PAK T/R

*** Electronics: STMICROELECTRONICS STH315N10F7-6 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V

***nell: MOSFET, N CH, 100V, 180A, H2PAK-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V

Market price

부분 #	제조	설명	재고	가격
IRFS4115-7PPBF DISTI # V36:1790_06392342	Infineon Technologies AG	Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube	60	1000:$3.6970 500:$3.8970 100:$4.2290 50:$4.6970
IRFS4115-7PPBF DISTI # IRFS4115-7PPBF-ND	Infineon Technologies AG	MOSFET N-CH 150V 105A D2PAK-7 RoHS: Compliant Min Qty: 200 Container: Tube	Limited Supply - Call
IRFS4115-7PPBF DISTI # 27095025	Infineon Technologies AG	Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube	50	50:$4.6970
IRFS4115-7PPBF DISTI # 70019189	Infineon Technologies AG	IRFS4115-7PPBF N-channel MOSFET Transistor,105 A,150 V,7-Pin D2PAK RoHS: Compliant	0	200:$3.0300
IRFS4115-7PPBF	International Rectifier	RoHS: Not Compliant	14	1000:$2.1700 500:$2.2900 100:$2.3800 25:$2.4800 1:$2.6700
IRFS4115-7PPBF DISTI # 942-IRFS4115-7PPBF	Infineon Technologies AG	MOSFET 150V 1 N-CH HEXFET 11.8mOhms 73nC RoHS: Compliant	0
IRFS41157PPBF	International Rectifier	RoHS: Compliant	Europe - 166
IRFS4115-7PPBF DISTI # C1S322000587021	Infineon Technologies AG	MOSFETs	60	50:$4.6970

관련 상품

영상	부분 #	설명
	Mfr.#: IRFS4115TRLPBF OMO.#: OMO-IRFS4115TRLPBF	MOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg
	Mfr.#: IRFS4115TRL7PP OMO.#: OMO-IRFS4115TRL7PP	MOSFET MOSFT 150V 105A 11.8mOhm 73nC Qg
	Mfr.#: IRFS4115TRLPBF-CUT TAPE OMO.#: OMO-IRFS4115TRLPBF-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: IRFS4115 OMO.#: OMO-IRFS4115-1190	신규 및 오리지널
	Mfr.#: IRFS4115-7PPBF OMO.#: OMO-IRFS4115-7PPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 105A D2PAK-7
	Mfr.#: IRFS4115PBF OMO.#: OMO-IRFS4115PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 195A D2-PAK
	Mfr.#: IRFS4115TR OMO.#: OMO-IRFS4115TR-1190	신규 및 오리지널
	Mfr.#: IRFS4115TRL7PP OMO.#: OMO-IRFS4115TRL7PP-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 105A D2PAK-7
	Mfr.#: IRFS4115TRLPBF OMO.#: OMO-IRFS4115TRLPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 195A D2PAK
	Mfr.#: IRFS4115TRPBF OMO.#: OMO-IRFS4115TRPBF-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 5000
수량 입력:

IRFS4115-7PPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$3.26~~; ~~US$3.26~~

10: ~~US$3.09~~; ~~US$30.92~~

100: ~~US$2.93~~; ~~US$292.95~~

500: ~~US$2.77~~; ~~US$1 383.40~~

1000: ~~US$2.60~~; ~~US$2 604.00~~

시작

IRFS411 8
IRFS41 19
IRFS4 107
IRFS 513
IRF 8615

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IRFS4115-7PPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes