We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| RFD8P06ESM DISTI # RFD8P06ESM | Renesas Electronics Corporation | - Bulk (Alt: RFD8P06ESM) RoHS: Not Compliant Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| RFD8P06ESM9A DISTI # RFD8P06ESM9A | Renesas Electronics Corporation | (Alt: RFD8P06ESM9A) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| RFD8P06LESM9A DISTI # RFD8P06LESM9A | ON Semiconductor | - Bulk (Alt: RFD8P06LESM9A) Min Qty: 1 Container: Bulk | Americas - 0 | |
| RFD8P06LE | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 7200 |
|
| RFD8P06E | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 2278 |
|
| RFD8P06ESM | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 414 |
|
| RFD8P06LE | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 1753 |
|
| RFD8P06E | Harris Semiconductor | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | 19 |
|
| RFD8P06ESM | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1125 |
|
| RFD8P06ESM | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 167 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 413 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 413 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1087 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 1087 |
|
| RFD8P06LESM | Harris Semiconductor | 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | 10 |
|
| RFD8P06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 4627 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: RFD16N06LESM9A OMO.#: OMO-RFD16N06LESM9A |
MOSFET 60V Single |
|
Mfr.#: RFD21737 OMO.#: OMO-RFD21737 |
RF Development Tools 2.4GHz transcvr mod. Built in RFDP8 Proto |
|
Mfr.#: RFD77313 OMO.#: OMO-RFD77313 |
Temperature Sensor Development Tools AS6200 Sensor Shield |
|
Mfr.#: RFD21742 OMO.#: OMO-RFD21742 |
Antennas RFDANT RFDP8 CE ETSI |
|
Mfr.#: RFD15N06LESM OMO.#: OMO-RFD15N06LESM-1190 |
Power Field-Effect Transistor, 15A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
Mfr.#: RFD3055LESM9A |
MOSFET N-CH 60V 11A TO-252AA |
|
|
Mfr.#: RFD8P06LESM9AR4407 OMO.#: OMO-RFD8P06LESM9AR4407-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFDIP1608060BLM6T25 OMO.#: OMO-RFDIP1608060BLM6T25-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFDIP2012090G1T OMO.#: OMO-RFDIP2012090G1T-1190 |
신규 및 오리지널 |
|
|
Mfr.#: RFDIP2012090GAT OMO.#: OMO-RFDIP2012090GAT-1190 |
신규 및 오리지널 |