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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIS412DN-T1-GE3 DISTI # V36:1790_07433130 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 21000 |
|
| SIS412DN-T1-GE3 DISTI # V72:2272_07433130 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 582 |
|
| SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 55350In Stock |
|
| SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 55350In Stock |
|
| SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 48000In Stock |
|
| SIS412DN-T1-GE3 DISTI # 30544025 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 21000 |
|
| SIS412DN-T1-GE3 DISTI # 30214242 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 6000 |
|
| SIS412DN-T1-GE3 DISTI # 30605326 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 2928 |
|
| SIS412DN-T1-GE3 DISTI # 29055604 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 582 |
|
| SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 3000 |
|
| SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS412DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 3000 |
|
| SIS412DN-T1-GE3 DISTI # SIS412DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SIS412DN-T1-GE3. DISTI # 15AC0289 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:15.6W,No. of Pins:8Pins RoHS Compliant: No | 3000 |
|
| SIS412DN-T1-GE3 DISTI # 55R1906 | Vishay Intertechnologies | MOSFET, N CHANNEL, 40V, 12A, POWERPAK8,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 7219 |
|
| SIS412DN-T1-GE3 DISTI # 70459588 | Vishay Siliconix | MOSFET N-CH 30V 12A 1212-8 PPAK RoHS: Compliant | 0 |
|
| SIS412DN-T1-GE3 DISTI # 781-SIS412DN-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 31670 |
|
| SIS412DN-T1-GE3 DISTI # 1807358 | Vishay Intertechnologies | N-CH POWERPAK1212 30V 24MOHM@10V- LEAD(P, RL | 3000 |
|
| SIS412DN-T1-GE3 | Vishay Intertechnologies | 15432 | ||
| SIS412DN-T1-GE3 | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 8.7A I(D), 30V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 800 |
|
| SIS412DN-T1-GE3 DISTI # 1779238 | Vishay Intertechnologies | MOSFET, N-CH, 30V, 12A, POWERPAK8 RoHS: Compliant | 7088 |
|
| SIS412DN-T1-GE3 DISTI # 1779238 | Vishay Intertechnologies | MOSFET, N-CH, 30V, 12A, POWERPAK8 | 6947 |
|
| SIS412DN-T1-GE3 DISTI # C1S806001139235 | Vishay Intertechnologies | MOSFETs RoHS: Compliant | 2928 |
|
| SIS412DNT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SIS412DN-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | Americas - 6000 |
|
| SI7804DN-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SIS412DN-T1-GE3 | Americas - |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SIS410DN-T1-GE3 OMO.#: OMO-SIS410DN-T1-GE3 |
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8 |
|
|
Mfr.#: SIS413DN-T1-GE3 OMO.#: OMO-SIS413DN-T1-GE3 |
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 |
|
|
Mfr.#: SIS414DN-T1-GE3 OMO.#: OMO-SIS414DN-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SISA88DN-T1-GE3 |
|
Mfr.#: SIS4101P OMO.#: OMO-SIS4101P-1190 |
신규 및 오리지널 |
|
Mfr.#: SIS410DN-T1-GE3 OMO.#: OMO-SIS410DN-T1-GE3-VISHAY |
MOSFET N-CH 20V 35A PPAK 1212-8 |
|
|
Mfr.#: SIS412DN-T1-E3 OMO.#: OMO-SIS412DN-T1-E3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SIS412DN-T1-GE3 QFN8 |
신규 및 오리지널 |
|
|
Mfr.#: SIS414DN-T1-GE3 OMO.#: OMO-SIS414DN-T1-GE3-VISHAY |
MOSFET N-CH 30V 20A 1212-8 PPAK |
|
|
Mfr.#: SIS415DNT-T1-E3 OMO.#: OMO-SIS415DNT-T1-E3-1190 |
신규 및 오리지널 |
|
Mfr.#: SIS415DNT-T1-GE3 OMO.#: OMO-SIS415DNT-T1-GE3-VISHAY |
MOSFET P-CH 20V 35A 1212-8 |