FDB031N08

Mfr. #:: FDB031N08
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET 75V N-Channel PowerTrench
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDB031N08 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 75 V

Id - 연속 드레인 전류:: 235 A

Rds On - 드레인 소스 저항:: 3.1 mOhms

Vgs - 게이트 소스 전압:: 20 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 375 W

구성:: 하나의

채널 모드:: 상승

상표명:: 파워트렌치

포장:: 릴

키:: 4.83 mm

길이:: 10.67 mm

시리즈:: FDB031N08

트랜지스터 유형:: 1 N-Channel

너비:: 9.65 mm

상표:: 온세미컨덕터 / 페어차일드

가을 시간:: 121 ns

상품 유형:: MOSFET

상승 시간:: 191 ns

공장 팩 수량:: 800

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 335 ns

일반적인 켜기 지연 시간:: 230 ns

단위 무게:: 0.062153 oz

Tags: FDB03, FDB0, FDB

Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB031N08 설명

***ure Electronics: N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ

***Yang: Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ment14 APAC: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package

***el Electronic: Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

***ure Electronics: N-Channel 60 V 2.4 mO Surface Mount PowerTrench Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60V, 265A, 2.4mΩ

***Yang: Trans MOSFET N-CH 60V 265A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ark: MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain

***ical: Trans MOSFET N-CH Si 60V 270A Automotive 3-Pin(2+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***ineon: Benefits: Advanced Process Technology; Ultra Low On-Resistance; Dynamic dv/dt Rating; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***nell: MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***(Formerly Allied Electronics): IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK

***roFlash: Single N-Channel 75 V 3 mOhm 160 nC HEXFET¬Æ Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W

***nell: MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D

***p One Stop Global: Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7

***emi: N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ

***r Electronics: Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***el Electronic: Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ical: Trans MOSFET N-CH 60V 193A 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 200kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 200K OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Market price

부분 #	제조	설명	재고	가격
FDB031N08 DISTI # V72:2272_06300773	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	497	250:$3.2100 100:$3.4740 25:$4.1070 10:$4.1090 1:$4.8040
FDB031N08 DISTI # V36:1790_06300773	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	0
FDB031N08 DISTI # FDB031N08CT-ND	ON Semiconductor	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1595In Stock	100:$4.3271 10:$5.2770 1:$5.9100
FDB031N08 DISTI # FDB031N08DKR-ND	ON Semiconductor	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1595In Stock	100:$4.3271 10:$5.2770 1:$5.9100
FDB031N08 DISTI # FDB031N08TR-ND	ON Semiconductor	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	2400:$2.7256 1600:$2.8690 800:$3.0739
FDB031N08 DISTI # 32316888	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	5600	800:$2.9175
FDB031N08 DISTI # 31601303	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	497	250:$3.2100 100:$3.5760 25:$4.1070 10:$4.1090 3:$4.8040
FDB031N08 DISTI # FDB031N08	ON Semiconductor	Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB031N08) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$2.0900 1600:$2.0900 3200:$2.0900 4800:$2.0900 8000:$1.9900
FDB031N08 DISTI # 07P9157	ON Semiconductor	FET 75V 3.1 MOHM D2PAK / REEL	0	9600:$2.4500 2400:$2.5300 800:$2.7700 1:$2.7900
FDB031N08 DISTI # 512-FDB031N08	ON Semiconductor	MOSFET 75V N-Channel PowerTrench RoHS: Compliant	18377	1:$4.9400 10:$4.2000 100:$3.6400 250:$3.4500 500:$3.1000
FDB031N08	ON Semiconductor	N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3 RoHS: Compliant	8800Reel	800:$2.2700
FDB031N08	Fairchild Semiconductor Corporation		638
FDB031N08	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	Europe - 298
FDB031N08 DISTI # XSFP00000106362	Fairchild Semiconductor Corporation	RoHS: Compliant	7200 in Stock0 on Order	7200:$4.1300 800:$4.5400
FDB031N08 DISTI # 3004020	ON Semiconductor	MOSFET, N-CH, 235A, 75V, TO-263 RoHS: Compliant	0	1000:$3.9000 500:$4.2300 250:$4.6200 100:$5.0800 10:$5.6300 1:$6.3400

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	Mfr.#: FDB52N20TM OMO.#: OMO-FDB52N20TM-ON-SEMICONDUCTOR	MOSFET N-CH 200V 52A D2PAK
	Mfr.#: NTSB30100CTT4G OMO.#: OMO-NTSB30100CTT4G-ON-SEMICONDUCTOR	Schottky Diodes & Rectifiers 30A 100V LVFR DUAL D2PAK

유효성

재고:: 18
주문 시:: 2001
수량 입력:

FDB031N08의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$4.94~~; ~~US$4.94~~

10: ~~US$4.20~~; ~~US$42.00~~

100: ~~US$3.64~~; ~~US$364.00~~

250: ~~US$3.45~~; ~~US$862.50~~

500: ~~US$3.10~~; ~~US$1 550.00~~

시작

FDB03 14
FDB0 73
FDB 624

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FDB031N08

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes