HGTP12N60C3D

Mfr. #:: HGTP12N60C3D
제조사:: ON Semiconductor / Fairchild
설명:: IGBT Transistors HGTP12N60C3D
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HGTP12N60C3D 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-220-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 1.65 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 24 A

Pd - 전력 손실:: 104 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

시리즈:: HGTP12N60C3D

포장:: 튜브

연속 수집가 현재 IC 최대:: 24 A

키:: 9.4 mm

길이:: 10.67 mm

너비:: 4.83 mm

상표:: 온세미컨덕터 / 페어차일드

지속적인 수집가 전류:: 24 A

게이트-이미터 누설 전류:: +/- 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 800

하위 카테고리:: IGBT

부품 번호 별칭:: HGTP12N60C3D_NL

단위 무게:: 0.063493 oz

Tags: HGTP12N60C3D, HGTP12N60C, HGTP12, HGTP1, HGTP, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTP12N60C3D 평가 및 리뷰

P***f

Alles ok

2019-04-04

M***y

Ok! Did not check

2019-07-14

HGTP12N60C3D 설명

***ical: Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail

***p One Stop Global: Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB

***inecomponents.com: 600V,24A,UFS SERIES NCH IGBT,W/ANTI-PARALLEL HYPERFAST DIODE

***i-Key: IGBT SMPS N-CH 600V 24A TO-220AB

***ark: Ptpigbt To220 24A 600V Rohs Compliant: Yes

***eco: 3 LD PLASTIC W/EXPOSED HEATSNK <AZ

***Semiconductor: 600V, UFS IGBT

***ser: IGBTs HGTP12N60C3D

***rchild Semiconductor: This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.

Market price

부분 #	제조	설명	재고	가격
HGTP12N60C3D DISTI # V36:1790_06359238	ON Semiconductor	PTPIGBT TO220 24A 600V	780	800:$3.2470
HGTP12N60C3D DISTI # V99:2348_06359238	ON Semiconductor	PTPIGBT TO220 24A 600V	550	5000:$2.0330 2500:$2.0660 1000:$2.1669 500:$2.1900 250:$2.3430 100:$2.4580 10:$2.8190 1:$3.2470
HGTP12N60C3D DISTI # HGTP12N60C3D-ND	ON Semiconductor	IGBT 600V 24A 104W TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1600:$2.0421 800:$2.4214 100:$2.8444 10:$3.4720 1:$3.8700
HGTP12N60C3D DISTI # 30329720	ON Semiconductor	PTPIGBT TO220 24A 600V	780	500:$2.1900 250:$2.3430 100:$2.4580 10:$2.8190 5:$3.2470
HGTP12N60C3D DISTI # 26156899	ON Semiconductor	PTPIGBT TO220 24A 600V	550	500:$2.1900 250:$2.3430 100:$2.4580 10:$2.8190 3:$3.2470
HGTP12N60C3D DISTI # 14141576	ON Semiconductor	PTPIGBT TO220 24A 600V	400	10:$1.1094
HGTP12N60C3D DISTI # HGTP12N60C3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60C3D) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$1.5900 1600:$1.5900 3200:$1.5900 4800:$1.5900 8000:$1.4900
HGTP12N60C3D DISTI # 58K1596	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 58K1596) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$4.0500 10:$3.4400 25:$3.2900 50:$3.1400 100:$2.9800 250:$2.8400 500:$2.5400
HGTP12N60C3D DISTI # 58K1596	ON Semiconductor	SINGLE IGBT, 600V, 24A,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:104W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes	329	1:$4.0500 10:$3.4400 25:$3.2900 50:$3.1400 100:$2.9800 250:$2.8400 500:$2.5400
HGTP12N60C3D. DISTI # 27AC6332	Fairchild Semiconductor Corporation	PTPIGBT TO220 24A 600V , ROHS COMPLIANT: YES	0	1:$4.1300 10:$3.5100 25:$3.3600 50:$3.1400 100:$2.9800 250:$2.8400 500:$2.5400
HGTP12N60C3D	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	30	1000:$2.9600 500:$3.1100 100:$3.2400 25:$3.3800 1:$3.6400
HGTP12N60C3D	ON Semiconductor	HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB RoHS: Compliant	3999Tube	5:$2.4200 50:$2.2000 300:$1.8300
HGTP12N60C3D DISTI # 512-HGTP12N60C3D	ON Semiconductor	IGBT Transistors HGTP12N60C3D RoHS: Compliant	17	1:$3.6800 10:$3.1300 100:$2.7100 250:$2.5800 500:$2.3100 1000:$1.9500 2500:$1.8500
HGTP12N60C3D DISTI # C1S541901409674	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	550	500:$2.1900 100:$2.4580 1:$3.2470
HGTP12N60C3D DISTI # XSFP00000011186	Fairchild Semiconductor Corporation	RoHS: Compliant	2691	50:$4.8400 2691:$4.4000

관련 상품

영상	부분 #	설명
	Mfr.#: IR2117PBF OMO.#: OMO-IR2117PBF	Gate Drivers 1 HI SIDE DRVR NONINVERTING INPUT
	Mfr.#: IR21531DPBF OMO.#: OMO-IR21531DPBF	Gate Drivers HALF BRDG DRVR 600V 15.6Vclamp 0.6
	Mfr.#: MIC4420YN OMO.#: OMO-MIC4420YN	Gate Drivers 6A Hi-Speed, Hi-Current Single MOSFET Driver
	Mfr.#: MIC4428YN OMO.#: OMO-MIC4428YN	Gate Drivers 1.5A Dual High Speed MOSFET Driver
	Mfr.#: HFA08TB60PBF OMO.#: OMO-HFA08TB60PBF	Rectifiers 8A 600V Ultrafast diode
	Mfr.#: HFA15TB60PBF OMO.#: OMO-HFA15TB60PBF	Rectifiers 15A 600V Ultrafast diode
	Mfr.#: IRFP460PBF OMO.#: OMO-IRFP460PBF	MOSFET N-CH 500V HEXFET MOSFET
	Mfr.#: IRF830PBF OMO.#: OMO-IRF830PBF	MOSFET N-CH 500V HEXFET MOSFET
	Mfr.#: SPW47N60C3 OMO.#: OMO-SPW47N60C3	MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3
	Mfr.#: ECA-1HHG102 OMO.#: OMO-ECA-1HHG102	Aluminum Electrolytic Capacitors - Radial Leaded 1000uF 50V

유효성

재고:: 715
주문 시:: 2698
수량 입력:

HGTP12N60C3D의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$3.67~~; ~~US$3.67~~

10: ~~US$3.12~~; ~~US$31.20~~

100: ~~US$2.71~~; ~~US$271.00~~

250: ~~US$2.57~~; ~~US$642.50~~

500: ~~US$2.30~~; ~~US$1 150.00~~

시작

HGTP12N60C3D 4
HGTP12N60C 5
HGTP12 12
HGTP1 39
HGTP 95
HGT 430

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HGTP12N60C3D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

P***f

M***y

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes