IPP60R180P7XKSA1

IPP60R180P7XKSA1
Mfr. #:
IPP60R180P7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP60R180P7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPP60R180P7XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
18 A
Rds On - 드레인 소스 저항:
145 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
25 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
72 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
8 ns
상품 유형:
MOSFET
상승 시간:
12 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
85 ns
일반적인 켜기 지연 시간:
14 ns
부품 번호 별칭:
IPP60R180P7 SP001606038
단위 무게:
0.063493 oz
Tags
IPP60R18, IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 650 V 180 mOhm 25 nC CoolMOS™ Power Mosfet - TO-220
***ow.cn
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube
***ark
High Power_New Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPP60R180P7XKSA1
DISTI # V99:2348_17076885
Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube0
  • 1000:$1.0624
  • 500:$1.0965
  • 100:$1.5648
  • 10:$1.9106
  • 1:$2.2043
IPP60R180P7XKSA1
DISTI # IPP60R180P7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 18A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
488In Stock
  • 1000:$1.4605
  • 500:$1.7305
  • 100:$2.1805
  • 10:$2.6750
  • 1:$2.9500
IPP60R180P7XKSA1
DISTI # IPP60R180P7XKSA1
Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R180P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.1779
  • 502:$1.1359
  • 1002:$1.0949
  • 2500:$1.0579
  • 5000:$1.0389
IPP60R180P7XKSA1
DISTI # SP001606038
Infineon Technologies AGHIGH POWER_NEW (Alt: SP001606038)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.3619
  • 10:€1.2379
  • 25:€1.1349
  • 50:€1.0899
  • 100:€1.0479
  • 500:€1.0089
  • 1000:€0.9729
IPP60R180P7XKSA1
DISTI # 726-IPP60R180P7XKSA1
Infineon Technologies AGMOSFET
RoHS: Compliant
5441
  • 1:$2.4000
  • 10:$2.0400
  • 100:$1.6300
  • 500:$1.4300
  • 1000:$1.1800
IPP60R180P7XKSA1
DISTI # 2784035
Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-220
RoHS: Compliant
0
  • 1000:$1.7400
  • 500:$1.8300
  • 250:$1.9300
  • 100:$2.0500
  • 10:$2.3100
  • 1:$2.4700
IPP60R180P7XKSA1
DISTI # 2784035
Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-220
RoHS: Compliant
0
  • 500:£1.1100
  • 250:£1.1900
  • 100:£1.2600
  • 10:£1.5900
  • 1:£2.1100
영상 부분 # 설명
NCP51530BDR2G

Mfr.#: NCP51530BDR2G

OMO.#: OMO-NCP51530BDR2G

Gate Drivers 700V HALF BRIDGE DRIVER
DFLZ15-7

Mfr.#: DFLZ15-7

OMO.#: OMO-DFLZ15-7

Zener Diodes 1.0W 15V
KBU8M

Mfr.#: KBU8M

OMO.#: OMO-KBU8M

Bridge Rectifiers 1000V 8A Bridge Rectifier
DFB2580

Mfr.#: DFB2580

OMO.#: OMO-DFB2580

Bridge Rectifiers 800V 25A Glass Pass. Bridge Rectifier
DFLZ18-7

Mfr.#: DFLZ18-7

OMO.#: OMO-DFLZ18-7

Zener Diodes 1.0W 18V
STTH2R06A

Mfr.#: STTH2R06A

OMO.#: OMO-STTH2R06A

Rectifiers RECTIFIER
UC2845D8TR

Mfr.#: UC2845D8TR

OMO.#: OMO-UC2845D8TR

Switching Controllers Current-Mode PWM Controller
DSSK70-008A

Mfr.#: DSSK70-008A

OMO.#: OMO-DSSK70-008A

Schottky Diodes & Rectifiers 70 Amps 80V
2EDF7175FXUMA1

Mfr.#: 2EDF7175FXUMA1

OMO.#: OMO-2EDF7175FXUMA1

Gate Drivers
CRCW12061K50FKEB

Mfr.#: CRCW12061K50FKEB

OMO.#: OMO-CRCW12061K50FKEB-VISHAY-DALE

Thick Film Resistors - SMD 1/4watt 1.5Kohms 1%
유효성
재고:
Available
주문 시:
1989
수량 입력:
IPP60R180P7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.40
US$2.40
10
US$2.04
US$20.40
100
US$1.63
US$163.00
500
US$1.43
US$715.00
1000
US$1.18
US$1 180.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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