OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

FDP5N60NZ

FDP5N60NZ
Mfr. #:
FDP5N60NZ
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 600V N-Channel MOSFET, UniFET-II
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDP5N60NZ 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FDP5N60NZ 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
4.5 A
Rds On - 드레인 소스 저항:
1.65 Ohms
Vgs th - 게이트 소스 임계 전압:
5 V
Vgs - 게이트 소스 전압:
25 V
Qg - 게이트 차지:
10 nC
Pd - 전력 손실:
100 W
구성:
하나의
상표명:
유니펫
포장:
튜브
키:
16.3 mm
길이:
10.67 mm
시리즈:
FDP5N60NZ
트랜지스터 유형:
1 N-Channel
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
5 S
가을 시간:
20 ns
상품 유형:
MOSFET
상승 시간:
20 ns
공장 팩 수량:
800
하위 카테고리:
MOSFET
단위 무게:
0.063493 oz
Tags
FDP5N, FDP5, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 4.5 A, 600 V, 3-Pin TO-220 ON Semiconductor FDP5N60NZ
***Semiconductor
N-Channel Power MOSFET, UniFETTM II, 600V, 4A, 2Ω, TO-220
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Tube
***ark
RAIL/UniFET2 600V N-Channel MOSFET, TO220
***i-Key
MOSFET N-CH 600V 4.5A TO-220-3
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
N-Channel UniFET II™ MOSFETs
ON Semiconductor UniFET II™ MOSFETs are N-channel enhancement mode power field effect transistors that are produced using proprietary, planar stripe, DMOS technology. The advanced technology of UniFET II MOSFETs has been tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These MOSFETs are well-suited for high efficiency switching mode power supplies and active power factor correction.Learn More
부분 # 제조 설명 재고 가격
FDP5N60NZ
DISTI # 26733896		ON SemiconductorUNIFET2 600V N-CHANNEL MOSFET,800
  • 800:$0.6606
FDP5N60NZ
DISTI # FDP5N60NZ-ND		ON SemiconductorMOSFET N-CH 600V 4.5A TO-220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$0.6605
FDP5N60NZ
DISTI # V36:1790_06359306		ON SemiconductorUNIFET2 600V N-CHANNEL MOSFET,0
  • 800000:$0.4013
  • 400000:$0.4018
  • 80000:$0.4767
  • 8000:$0.6330
  • 800:$0.6606
FDP5N60NZ
DISTI # FDP5N60NZ		ON SemiconductorTrans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP5N60NZ)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.4079
  • 4800:$0.4189
  • 3200:$0.4239
  • 1600:$0.4299
  • 800:$0.4319
FDP5N60NZ
DISTI # FDP5N60NZ		ON SemiconductorTrans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP5N60NZ)
Min Qty: 582
Container: Bulk		Americas - 0
  • 5820:$0.5299
  • 2910:$0.5439
  • 1746:$0.5509
  • 1164:$0.5579
  • 582:$0.5619
FDP5N60NZ
DISTI # FDP5N60NZ		ON SemiconductorTrans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP5N60NZ)
RoHS: Compliant
Min Qty: 800		Asia - 0
  • 40000:$0.5428
  • 20000:$0.5518
  • 8000:$0.5709
  • 4000:$0.5913
  • 2400:$0.6131
  • 1600:$0.6367
  • 800:$0.6622
FDP5N60NZ
DISTI # 54T8357		ON SemiconductorUF2 600V 2.0OHM TO220 / TUBE0
  • 10000:$0.4980
  • 2500:$0.5130
  • 1000:$0.6360
  • 500:$0.7280
  • 100:$0.8230
  • 10:$1.0800
  • 1:$1.2600
FDP5N60NZ
DISTI # 512-FDP5N60NZ		ON SemiconductorMOSFET 600V N-Channel MOSFET, UniFET-II
RoHS: Compliant		741
  • 1:$1.0800
  • 10:$0.9260
  • 100:$0.7110
  • 500:$0.6290
  • 1000:$0.4960
  • 2500:$0.4400
  • 10000:$0.4230
FDP5N60NZFairchild Semiconductor CorporationPower Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1756
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
FDP5N60NZ
DISTI # 8063563		ON SemiconductorMOSFETFAIRCHILDFDP5N60NZ, PK185
  • 50:£0.3120
  • 5:£0.3180
영상 부분 # 설명
ATECC608A-SSHDA-B

Mfr.#: ATECC608A-SSHDA-B

OMO.#: OMO-ATECC608A-SSHDA-B

 Security ICs / Authentication ICs ECC/ECDSA/ECDHE I2C SOIC Bulk
CRCW12064K75FKEAC

Mfr.#: CRCW12064K75FKEAC

OMO.#: OMO-CRCW12064K75FKEAC

 Thick Film Resistors - SMD 1/4Watt 4.75Kohms 1% Commercial Use
CRCW12061K00JNEAC

Mfr.#: CRCW12061K00JNEAC

OMO.#: OMO-CRCW12061K00JNEAC

 Thick Film Resistors - SMD 1/4Watt 1Kohms 5% Commercial Use
CRCW12064K75FKEAC

Mfr.#: CRCW12064K75FKEAC

OMO.#: OMO-CRCW12064K75FKEAC-VISHAY-DALE

 D25/CRCW1206-C 100 4K75 1% ET1
CRCW12060000Z0EBC

Mfr.#: CRCW12060000Z0EBC

OMO.#: OMO-CRCW12060000Z0EBC-VISHAY-DALE

 D25/CRCW1206-C 0R0 ET5 E3
CRCW12063R90FKEA

Mfr.#: CRCW12063R90FKEA

OMO.#: OMO-CRCW12063R90FKEA-VISHAY-DALE

 Res Thick Film 1206 3.9 Ohm 1% 0.25W(1/4W) ±100ppm/°C Pad SMD Automotive T/R
ATECC608A-SSHDA-B

Mfr.#: ATECC608A-SSHDA-B

OMO.#: OMO-ATECC608A-SSHDA-B-MICROCHIP-TECHNOLOGY

 IC AUTHENTICATION CHIP 8SOIC
CRCW120610K0FKEAC

Mfr.#: CRCW120610K0FKEAC

OMO.#: OMO-CRCW120610K0FKEAC-VISHAY-DALE

 D25/CRCW1206-C 100 10K 1% ET1
DRV5053OAQLPG

Mfr.#: DRV5053OAQLPG

OMO.#: OMO-DRV5053OAQLPG-TEXAS-INSTRUMENTS

 Magnetic Sensors Board Mount Hall Effect / Magnetic Sensors 2.5 to 38 V 3-TO-92 -40 to 125
CRCW12061K00JNEAC

Mfr.#: CRCW12061K00JNEAC

OMO.#: OMO-CRCW12061K00JNEAC-VISHAY-DALE

 D25/CRCW1206-C 200 1K0 5% ET1
유효성
재고:
741
주문 시:
2724
수량 입력:
FDP5N60NZ의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.08
US$1.08
10
US$0.93
US$9.26
100
US$0.71
US$71.10
500
US$0.63
US$314.50
1000
US$0.50
US$496.00
2500
US$0.44
US$1 100.00
10000
US$0.42
US$4 230.00
25000
US$0.41
US$10 250.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
최신 제품
  • Gate Drivers
    Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • Compare FDP5N60NZ
    Compare FDP5N60NZ
    FDP5N06HD vs FDP5N50 vs FDP5N5007
  • NCP137 700 mA LDO Regulators
    NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • FDMQ86530L Quad-MOSFET
    FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
More Newest Products
Top