SI9945BDY-T1-GE3

Mfr. #:: SI9945BDY-T1-GE3
제조사:: Vishay
설명:: MOSFET 2N-CH 60V 5.3A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI9945BDY-T1-GE3 데이터 시트
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추가 정보:: SI9945BDY-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI9945BDY-GE3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-SO

구성: 듀얼 듀얼 드레인

FET형: 2 N-Channel (Dual)

파워맥스: 3.1W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 60V

입력-커패시턴스-Ciss-Vds: 665pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 5.3A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.3A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 20nC @ 10V

Pd 전력 손실: 2 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns

상승 시간: 65 ns 15 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 4.3 A

Vds-드레인-소스-고장-전압: 60 V

Rds-On-Drain-Source-Resistance: 58 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 15 ns 20 ns

일반 켜기 지연 시간: 15 ns 10 ns

채널 모드: 상승

Tags: SI9945BDY-T1-G, SI9945BDY-T, SI9945BD, SI9945B, SI9945, SI994, SI99, SI9

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9945BDY-T1-GE3 설명

***Components: On a Reel of 2500, Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

***th Star Micro: Transistor MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R

***ure Electronics: SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8

***ied Electronics & Automation: MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W

***ical: Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R

***C: Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC

***ark: Dual N-Channel 60-V (D-S) Mosfet Rohs Compliant: No

***i-Key: MOSFET 2N-CH 60V 5.3A 8-SOIC

***ponent Sense: NFET 60V 4.7 to 5.3A 0.058 to 0.072Oh

***ukat: 2xN-Ch 60V 5,3A 2,0W 0,058R SO8

***ronik: DUAL N-CH 60V 5,3A 58mOhm SO-8

***: DUAL N-CHANNEL 60-V (D-S)

***nell: MOSFET, NN CH, 60V, 5.3A, 8SOIC; Module Configuration:Dual N Channel; Transistor Polarity:N-Channel; Current Id Max:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8

***ment14 APAC: MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W

SI9945BDY-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

부분 #	제조	설명	재고	가격
SI9945BDY-T1-GE3 DISTI # V72:2272_09216529	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	471	250:$0.4802 100:$0.4815 25:$0.5858 10:$0.5880 1:$0.6788
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13862In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13862In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	2500:$0.3810
SI9945BDY-T1-GE3 DISTI # 30722949	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	471	250:$0.4802 100:$0.4815 25:$0.5858 22:$0.5880
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 127295	2500:€0.6009 5000:€0.4099 10000:€0.3529 15000:€0.3259 25000:€0.3029
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9945BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3539 5000:$0.3439 10000:$0.3299 15000:$0.3209 25000:$0.3119
SI9945BDY-T1-GE3 DISTI # 72R4255	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 72R4255) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.0900 10:$0.9020 25:$0.8380 50:$0.7740 100:$0.7100 250:$0.6660 500:$0.6200
SI9945BDY-T1-GE3 DISTI # 72R4255	Vishay Intertechnologies	MOSFET, DUAL N CH, 60V, 5.3A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):46mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:2.5V , RoHS Compliant: Yes	1093	1:$1.0900 10:$0.9030 25:$0.8380 50:$0.7740 100:$0.7090 250:$0.6660 500:$0.6210
SI9945BDY-T1-GE3. DISTI # 26AC3355	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.3570 2500:$0.3490 5000:$0.3400 10000:$0.3270
SI9945BDY-T1-GE3 DISTI # 70026454	Vishay Siliconix	MOSFET,Dual N-Ch,Vds 60V,Vgs +/- 20V,Rds(on) 46mohm,Id 5.3,SO-8,Pd 3.1W RoHS: Compliant	2470	1:$0.4880 25:$0.4630 100:$0.4390 250:$0.4150 500:$0.3980
SI9945BDY-T1-GE3 DISTI # 781-SI9945BDY-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	11149	1:$0.9000 10:$0.7350 100:$0.5640 500:$0.4850 1000:$0.3830 2500:$0.3570 5000:$0.3400 10000:$0.3270
SI9945BDY-T1-GE3	Vishay Intertechnologies	SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8 RoHS: Compliant	87500Reel	2500:$0.3300
SI9945BDY-T1-GE3 DISTI # 7878995	Vishay Intertechnologies	MOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, PK	1140	10:£0.5700 30:£0.5020
SI9945BDY-T1-GE3 DISTI # 7878995P	Vishay Intertechnologies	MOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, RL	8590	30:£0.5020
SI9945BDYT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 800
SI9945BDY-T1-GE3 DISTI # TMOSP9460	Vishay Intertechnologies	DUAL N-CH 60V 5,3A 58mOhm SO-8 RoHS: Compliant	Stock DE - 2500Stock US - 0	2500:$0.3384
SI9945BDY-T1-GE3 DISTI # SI9945BDY-GE3	Vishay Intertechnologies	2xN-Ch 60V 5,3A 2,0W 0,058R SO8 RoHS: Compliant	8350	50:€0.3990 100:€0.3390 500:€0.3090 2500:€0.2985
SI9945BDY-T1-GE3 DISTI # XSFP00000015511	Vishay Siliconix	SmallSignalField-EffectTransistor,5.3AI(D),60V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	679731	2500:$0.7100 679731:$0.6455
SI9945BDY-T1-GE3 DISTI # 1794822	Vishay Intertechnologies	MOSFET, NN CH, 60V, 5.3A, 8SOIC RoHS: Compliant	13365	5:£0.5810 25:£0.5120 100:£0.4350 250:£0.4050 500:£0.3740
SI9945BDY-T1-GE3 DISTI # 1794822RL	Vishay Intertechnologies	MOSFET, NN CH, 60V, 5.3A, 8SOIC RoHS: Compliant	0	1:$1.4300 10:$1.1700 100:$0.8930 500:$0.7680 1000:$0.6060 2500:$0.5650 5000:$0.5380 10000:$0.5180
SI9945BDY-T1-GE3 DISTI # 1794822	Vishay Intertechnologies	MOSFET, NN CH, 60V, 5.3A, 8SOIC RoHS: Compliant	7350	1:$1.4300 10:$1.1700 100:$0.8930 500:$0.7680 1000:$0.6060 2500:$0.5650 5000:$0.5380 10000:$0.5180
SI9945BDY-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 35000
SI9945BDY-T1-GE3.	Vishay Intertechnologies	MOSFET DUAL N-CHANNEL 60-V (D-S) RoHS: Compliant	Americas - 2025	25:$0.4480
SI9945BDY-T1-GE3	Vishay Intertechnologies	60V,5.3A,Dual N-Channel MOSFET	90	1:$0.6700 100:$0.4700 500:$0.3600 1000:$0.3400
SI9945BDY-T1-GE3 DISTI # C1S806000594091	Vishay Intertechnologies	MOSFETs	471	250:$0.4781 100:$0.4795 25:$0.5824 10:$0.5848

영상	부분 #	설명
	Mfr.#: SI9945BDY-T1-GE3 OMO.#: OMO-SI9945BDY-T1-GE3	MOSFET 60V Vds 20V Vgs SO-8
	Mfr.#: SI9945BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9945BDY-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SI9945BDY OMO.#: OMO-SI9945BDY-1190	신규 및 오리지널
	Mfr.#: SI9945BDY-T1 OMO.#: OMO-SI9945BDY-T1-1190	신규 및 오리지널
	Mfr.#: SI9945BDY-T1-E3 OMO.#: OMO-SI9945BDY-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI9945BDY-T1-GE3 OMO.#: OMO-SI9945BDY-T1-GE3-VISHAY	MOSFET 2N-CH 60V 5.3A 8-SOIC
	Mfr.#: SI9945BDY-T1-GE3. OMO.#: OMO-SI9945BDY-T1-GE3--1190	DUAL N-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO

SI9945BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes