IPW60R180P7XKSA1

Mfr. #:: IPW60R180P7XKSA1
제조사:: Infineon Technologies
설명:: MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPW60R180P7XKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IPW60R180P7XKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-247-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 18 A

Rds On - 드레인 소스 저항:: 145 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 25 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 72 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 튜브

시리즈:: CoolMOS P7

트랜지스터 유형:: 1 N-Channel

상표:: 인피니언 테크놀로지스

가을 시간:: 8 ns

상품 유형:: MOSFET

상승 시간:: 12 ns

공장 팩 수량:: 240

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 85 ns

일반적인 켜기 지연 시간:: 14 ns

부품 번호 별칭:: IPW60R180P7 SP001606058

단위 무게:: 0.211644 oz

Tags: IPW60R18, IPW60R1, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW60R180P7XKSA1 설명

***ure Electronics: Single N-Channel 600 V 180 mOhm 25 nC CoolMOS Power Mosfet - TO-247-3

***ark: Mosfet, N-Ch, 600V, 18A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

IPW60R180P7XKSA1 추가 정보

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

부분 #	제조	설명	재고	가격
IPW60R180P7XKSA1 DISTI # V99:2348_17072470	Infineon Technologies AG	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube	80	1200:$1.6880 720:$1.7260 240:$2.0219 10:$2.3380 1:$3.0151
IPW60R180P7XKSA1 DISTI # V36:1790_17072470	Infineon Technologies AG	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube	0
IPW60R180P7XKSA1 DISTI # IPW60R180P7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 18A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	220In Stock	2640:$1.4629 720:$1.8213 240:$2.1394 25:$2.4684 10:$2.6110 1:$2.9100
IPW60R180P7XKSA1 DISTI # 32330357	Infineon Technologies AG	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube	480	500:$1.7127 250:$1.9107 240:$2.0097
IPW60R180P7XKSA1 DISTI # 31920305	Infineon Technologies AG	Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube	80	1200:$1.6880 720:$1.7260 240:$2.0219 10:$2.3380 5:$3.0151
IPW60R180P7XKSA1 DISTI # IPW60R180P7XKSA1	Infineon Technologies AG	HIGH POWER_NEW - Rail/Tube (Alt: IPW60R180P7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	960:$1.2900 1440:$1.2900 2400:$1.2900 480:$1.3900 240:$1.4900
IPW60R180P7XKSA1 DISTI # 34AC1732	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	258	500:$1.7500 100:$2.0500 10:$2.3700 1:$2.7900
IPW60R180P7XKSA1 DISTI # 726-IPW60R180P7XKSA1	Infineon Technologies AG	MOSFET RoHS: Compliant	1790	1:$2.7600 10:$2.3500 100:$2.0300 250:$1.9300 500:$1.7300
IPW60R180P7XKSA1	Infineon Technologies AG	Single N-Channel 600 V 180 mOhm 25 nC CoolMOS Power Mosfet - TO-247-3 RoHS: Not Compliant	240Tube	240:$1.3900 480:$1.3200
IPW60R180P7XKSA1 DISTI # 2784039	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-247	258	500:£1.3300 250:£1.4800 100:£1.5600 10:£1.8000 1:£2.3800
IPW60R180P7XKSA1 DISTI # 2784039	Infineon Technologies AG	MOSFET, N-CH, 600V, 18A, TO-247 RoHS: Compliant	258	1000:$2.0400 500:$2.1300 250:$2.2500 100:$2.3800 10:$2.6900 1:$2.8800
IPW60R180P7XKSA1 DISTI # XSFP00000105266	Infineon Technologies AG	RoHS: Compliant	480 in Stock0 on Order	480:$2.5300 240:$2.7800

IPW60R180P7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes