HMC717LP3ETR

HMC717LP3ETR
Mfr. #:
HMC717LP3ETR
제조사:
HITTITE
설명:
GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HMC717LP3ETR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
히타이트
제품 카테고리
IC 칩
Tags
HMC717, HMC71, HMC7, HMC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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The HMC717LP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Applications Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points
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The HMC618LP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E). Applications Cellular/3G and LTE/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio
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new, original packaged
부분 # 제조 설명 재고 가격
HMC717LP3ETR
DISTI # VAH:2490_16964656
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz63
  • 25:$9.8500
  • 1:$11.0700
HMC717LP3ETR
DISTI # 31280879
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz100
  • 100:$21.0700
HMC717LP3ETR
DISTI # 26077661
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz63
  • 25:$9.8500
  • 1:$11.0700
영상 부분 # 설명
HMC717ALP3ETR

Mfr.#: HMC717ALP3ETR

OMO.#: OMO-HMC717ALP3ETR

RF Amplifier LNA w/ Adj Bias, 4.9 to 6.0GHz
HMC717ALP3E

Mfr.#: HMC717ALP3E

OMO.#: OMO-HMC717ALP3E

RF Amplifier LNA w/ Adj Bias, 4.9 to 6.0GHz
HMC717LP3ETR

Mfr.#: HMC717LP3ETR

OMO.#: OMO-HMC717LP3ETR-1190

GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz
HMC717

Mfr.#: HMC717

OMO.#: OMO-HMC717-1190

신규 및 오리지널
HMC717ALP3E

Mfr.#: HMC717ALP3E

OMO.#: OMO-HMC717ALP3E-ANALOG-DEVICES

IC RF AMP LTE 4.8GHZ-6GHZ 16QFN
HMC717ALP3ETR

Mfr.#: HMC717ALP3ETR

OMO.#: OMO-HMC717ALP3ETR-ANALOG-DEVICES

IC RF AMP LTE 4.8GHZ-6GHZ 16QFN
HMC717LP3E

Mfr.#: HMC717LP3E

OMO.#: OMO-HMC717LP3E-ANALOG-DEVICES

IC RF AMP GP 4.8GHZ-6GHZ 16QFN
유효성
재고:
Available
주문 시:
2000
수량 입력:
HMC717LP3ETR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.68
US$2.68
10
US$2.55
US$25.51
100
US$2.42
US$241.65
500
US$2.28
US$1 141.15
1000
US$2.15
US$2 148.00
시작
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