MWE6IC9100NR1

Mfr. #:: MWE6IC9100NR1
제조사:: NXP / Freescale
설명:: RF Amplifier 100W 26V GSM
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MWE6IC9100NR1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF 증폭기

RoHS:: E

장착 스타일:: SMD/SMT

유형:: 파워 앰프

동작 주파수:: 869 MHz to 960 MHz

얻다:: 33.5 dB

최대 작동 온도:: + 200 C

포장:: 릴

상표:: NXP / 프리스케일

채널 수:: 1 Channel

입력 반환 손실:: 15 dB

습기에 민감한:: 네

상품 유형:: RF 증폭기

공장 팩 수량:: 500

하위 카테고리:: 무선 및 RF 집적 회로

공급 전압 - 최대:: 32 V

공급 전압 - 최소:: 26 V

단위 무게:: 0.058255 oz

Tags: MWE6IC9100N, MWE6IC91, MWE6I, MWE6, MWE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MWE6IC9100NR1 설명

***et Europe: RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R

***el Electronic: IC RF AMP GSM 960MHZ TO270 WB-14

***i-Key: IC PWR AMP RF LDMOS TO270-14

***escale Semiconductor: GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V

***ical: RF Amp Chip Single Power Amp 2.05GHz 32V 14-Pin TO-270 WB EP T/R

***ponent Stockers USA: 1805 MHz - 2050 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 32 W Avg., 28 V

***et: RF Amp Chip Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R

***i-Key: IC PWR AMP RF 2170MHZ TO-270-14

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V

***W: Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720

***ical: RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin TO-270 WB T/R

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V

***ical: RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin(12+2Tab) TO-270 WB GULL T/R

***W: Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V

***ical: RF Amp Module Single Power Amp 2.17GHz 32V 15-Pin TO-270 W T/R

***i-Key: IC AMP PWR RF 2100MHZ TO270-14

***ponent Stockers USA: TELECOM CELLULAR RF AND BASEBAND CIRCUIT PDFM14

***escale Semiconductor: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V

***et: RF Amp Chip Dual Power Amplifier 2170MHz 32V 14-Pin TO-270WB T/R

***W: Amplifier,1805 to 2170 MHz, 12 W, Typ Gain in dB is 31.5 @ 2170 MHz, 28 V, LDMOS, SOT1720

***p One Stop Global: RF Amp Module Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R

Market price

부분 #	제조	설명	재고	가격
MWE6IC9100NR1 DISTI # MWE6IC9100NR1-ND	NXP Semiconductors	IC RF AMP GSM 960MHZ TO270 WB-14 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Limited Supply - Call
MWE6IC9100NR1 DISTI # MWE6IC9100NR1	Avnet, Inc.	RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R - Bulk (Alt: MWE6IC9100NR1) Min Qty: 6 Container: Bulk	Americas - 0	60:$58.0900 30:$59.1900 18:$61.4900 12:$63.9900 6:$66.5900
MWE6IC9100NR1 DISTI # 841-MWE6IC9100NR1	NXP Semiconductors	RF Amplifier 100W 26V GSM RoHS: Compliant	0
MWE6IC9100NR1	Freescale Semiconductor	Narrow Band High Power Amplifier, 869MHz Min, 960MHz Max RoHS: Compliant	149	1000:$60.1600 500:$63.3200 100:$65.9300 25:$68.7500 1:$74.0400

관련 상품

영상	부분 #	설명
	Mfr.#: MWE6IC9080NR1 OMO.#: OMO-MWE6IC9080NR1	RF Amplifier HV6E 900MHZ TO270WB14
	Mfr.#: MWE6IC9100NBR1 OMO.#: OMO-MWE6IC9100NBR1	RF Amplifier 100W 26V GSM
	Mfr.#: MWE6IC9100NR1 OMO.#: OMO-MWE6IC9100NR1	RF Amplifier 100W 26V GSM
	Mfr.#: MWE6IC9080NB OMO.#: OMO-MWE6IC9080NB-1190	신규 및 오리지널
	Mfr.#: MWE6IC9080NR1 OMO.#: OMO-MWE6IC9080NR1-NXP-SEMICONDUCTORS	IC AMP GSM 865MHZ-960MHZ TO270
	Mfr.#: MWE6IC9100GNR1 OMO.#: OMO-MWE6IC9100GNR1-NXP-SEMICONDUCTORS	IC RF AMP GSM 960MHZ TO270 WB-14
	Mfr.#: MWE6IC9100GNR5 OMO.#: OMO-MWE6IC9100GNR5-1190	신규 및 오리지널
	Mfr.#: MWE6IC9100NB OMO.#: OMO-MWE6IC9100NB-1190	신규 및 오리지널
	Mfr.#: MWE6IC9080NBR1 OMO.#: OMO-MWE6IC9080NBR1-NXP-SEMICONDUCTORS	RF Amplifier HV6E 900MHZ TO272WB14
	Mfr.#: MWE6IC9080GNR1 OMO.#: OMO-MWE6IC9080GNR1-NXP-SEMICONDUCTORS	RF Amplifier HV6E 900MHZ TO270WB14G

유효성

재고:: Available
주문 시:: 3500
수량 입력:

MWE6IC9100NR1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

MWE6IC9100N 6
MWE6IC91 9
MWE6I 13
MWE6 17
MWE 22

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MWE6IC9100NR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes