PSMN8R5-108ES

PSMN8R5-108ES
Mfr. #:
PSMN8R5-108ES
제조사:
Rochester Electronics, LLC
설명:
Darlington Transistors MOSFET N-Channel 100V 8.5mohm Fet
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
PSMN8R5-108ES 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
NXP반도체
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
단위 무게
0.084199 oz
장착 스타일
구멍을 통해
패키지 케이스
I2PAK-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
263 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
43 ns
상승 시간
35 ns
Vgs 게이트 소스 전압
4.4 V
Id-연속-드레인-전류
100 A
Vds-드레인-소스-고장-전압
108 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Resistance
8.5 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
87 ns
일반 켜기 지연 시간
20 ns
Qg-Gate-Charge
111 nC
채널 모드
상승
Tags
PSMN8R5-108, PSMN8R5-1, PSMN8R5, PSMN8, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 108V, 100A, TO-262-3
***nell
MOSFET, N CH, 108V, 100A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:108V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-226; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
부분 # 제조 설명 재고 가격
PSMN8R5-108ESQ
DISTI # 568-11432-5-ND
NXP SemiconductorsMOSFET N-CH 108V 100A I2PAK
RoHS: Compliant
Min Qty: 5000
Container: Tube
Limited Supply - Call
    PSMN8R5-108ES
    DISTI # 771-PSMN8R5-108ES
    NexperiaMOSFET N-Channel 100V 8.5mohm Fet
    RoHS: Compliant
    0
    • 5000:$1.1500
    PSMN8R5-108ESQ
    DISTI # 771-PSMN8R5-108ESQ
    NexperiaMOSFET PSMN8R5-108ES/I2PAK/STANDARD M
    RoHS: Compliant
    0
      PSMN8R5-108ESNXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      466
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ES127NXP SemiconductorsNow Nexperia PSMN8R5-108ES - Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Not Compliant
      167
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      PSMN8R5-108ESQ127NXP SemiconductorsNow Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RoHS: Not Compliant
      330
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      영상 부분 # 설명
      PSMN8R2-80YS,115

      Mfr.#: PSMN8R2-80YS,115

      OMO.#: OMO-PSMN8R2-80YS-115

      MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
      PSMN8R0-30YLC,115

      Mfr.#: PSMN8R0-30YLC,115

      OMO.#: OMO-PSMN8R0-30YLC-115-NXP-SEMICONDUCTORS

      MOSFET N-CH 30V 54A LL LFPAK
      PSMN8R0-80YLX

      Mfr.#: PSMN8R0-80YLX

      OMO.#: OMO-PSMN8R0-80YLX-NEXPERIA

      MOSFET N-CH 80V 100A LFPAK56
      PSMN8R0-40PS

      Mfr.#: PSMN8R0-40PS

      OMO.#: OMO-PSMN8R0-40PS-1190

      MOSFET Transistor, N Channel, 77 A, 40 V, 6.2 mohm, 10 V, 3 V RoHS Compliant: Yes
      PSMN8R0-40PS127

      Mfr.#: PSMN8R0-40PS127

      OMO.#: OMO-PSMN8R0-40PS127-1190

      Now Nexperia PSMN8R0-40PS - Power Field-Effect Transistor, 77A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      PSMN8R5-100PSQ

      Mfr.#: PSMN8R5-100PSQ

      OMO.#: OMO-PSMN8R5-100PSQ-NEXPERIA

      IGBT Transistors MOSFET PSMN8R5-100PS/SIL3P/RAILH
      PSMN8R0-40BS,118

      Mfr.#: PSMN8R0-40BS,118

      OMO.#: OMO-PSMN8R0-40BS-118-NEXPERIA

      MOSFET N-CH 40V 77A D2PAK
      PSMN8R5-108ESQ127

      Mfr.#: PSMN8R5-108ESQ127

      OMO.#: OMO-PSMN8R5-108ESQ127-1190

      Now Nexperia PSMN8R5-108ESQ - Power Field-Effect Transistor, 100A I(D), 108V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      PSMN8R5-100PSFQ

      Mfr.#: PSMN8R5-100PSFQ

      OMO.#: OMO-PSMN8R5-100PSFQ-NEXPERIA

      MOSFET N-CH 100V 98A TO220AB
      PSMN8R9-100BSEJ

      Mfr.#: PSMN8R9-100BSEJ

      OMO.#: OMO-PSMN8R9-100BSEJ-NEXPERIA

      PSMN8R9-100BSE/SOT404/D2PAK
      유효성
      재고:
      Available
      주문 시:
      4000
      수량 입력:
      PSMN8R5-108ES의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.23
      US$1.23
      10
      US$1.17
      US$11.68
      100
      US$1.11
      US$110.70
      500
      US$1.05
      US$522.75
      1000
      US$0.98
      US$984.00
      시작
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