S29GL01GS11TFV023

S29GL01GS11TFV023
Mfr. #:
S29GL01GS11TFV023
제조사:
Cypress Semiconductor
설명:
Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S29GL01GS11TFV023 데이터 시트
배달:
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S29GL01GS11TFV023 추가 정보 S29GL01GS11TFV023 Product Details
제품 속성
속성 값
제조사
싸이프레스 반도체
제품 카테고리
메모리
시리즈
GL-S
포장
테이프 및 릴(TR) 대체 포장
패키지 케이스
56-TFSOP (0.724", 18.40mm Width)
작동 온도
-40°C ~ 105°C (TA)
상호 작용
평행 한
전압 공급
2.7 V ~ 3.6 V
공급자-장치-패키지
56-TSOP
메모리 크기
1G (64M x 16)
메모리형
플래시 - NOR
속도
110ns
포맷 메모리
플래시
Tags
S29GL01GS11TFV, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS
***ark
TAPE AND REEL / 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
***i-Key
IC FLASH 1GBIT PARALLEL 56TSOP
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
부분 # 제조 설명 재고 가격
IS29GL01GS-11TFV023
DISTI # IS29GL01GS-11TFV023-ND
Cypress SemiconductorIC FLASH 1G PARALLEL
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    S29GL01GS11TFV023
    DISTI # S29GL01GS11TFV023-ND
    Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 1000:$8.7833
    S29GL01GS11TFV023
    DISTI # 727-29GL01GS11TFV023
    Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant
    0
    • 1000:$8.5300
    IS29GL01GS-11TFV023
    DISTI # 727-IS29GL01GS11TV23
    Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant
    0
      영상 부분 # 설명
      S29GL01GS11FHIV20

      Mfr.#: S29GL01GS11FHIV20

      OMO.#: OMO-S29GL01GS11FHIV20

      NOR Flash Nor
      S29GL01GS11FHSS60

      Mfr.#: S29GL01GS11FHSS60

      OMO.#: OMO-S29GL01GS11FHSS60

      NOR Flash Nor
      S29GL01GT12TFVV13

      Mfr.#: S29GL01GT12TFVV13

      OMO.#: OMO-S29GL01GT12TFVV13

      NOR Flash Nor
      S29GL01GP11TFCR105

      Mfr.#: S29GL01GP11TFCR105

      OMO.#: OMO-S29GL01GP11TFCR105-1151

      NOR Flash No
      S29GL01GT10DHA020

      Mfr.#: S29GL01GT10DHA020

      OMO.#: OMO-S29GL01GT10DHA020-CYPRESS-SEMICONDUCTOR

      IC 1 GB FLASH MEMORY
      S29GL01GS11FAIV20

      Mfr.#: S29GL01GS11FAIV20

      OMO.#: OMO-S29GL01GS11FAIV20-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL 64BGA GL-S
      S29GL01GS11TFV020

      Mfr.#: S29GL01GS11TFV020

      OMO.#: OMO-S29GL01GS11TFV020-CYPRESS-SEMICONDUCTOR

      Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
      S29GL01GS10TFI023

      Mfr.#: S29GL01GS10TFI023

      OMO.#: OMO-S29GL01GS10TFI023-CYPRESS-SEMICONDUCTOR

      Flash Memory 1G BIT, 3V, 100NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
      S29GL01GS10FHSS13

      Mfr.#: S29GL01GS10FHSS13

      OMO.#: OMO-S29GL01GS10FHSS13-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL 64BGA GL-S
      S29GL01GT12DHVV13

      Mfr.#: S29GL01GT12DHVV13

      OMO.#: OMO-S29GL01GT12DHVV13-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL GL-T
      유효성
      재고:
      Available
      주문 시:
      2500
      수량 입력:
      S29GL01GS11TFV023의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$12.80
      US$12.80
      10
      US$12.16
      US$121.55
      100
      US$11.52
      US$1 151.55
      500
      US$10.88
      US$5 437.90
      1000
      US$10.24
      US$10 236.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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