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SIHFIB16N50K-E3

SIHFIB16N50K-E3
Mfr. #:
SIHFIB16N50K-E3
제조사:
Vishay / Siliconix
설명:
RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHFIB16N50K-E3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIHFIB16N50K-E3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
IC 칩
시리즈
E
포장
튜브
단위 무게
0.211644 oz
패키지 케이스
TO-220-3
기술
시
채널 수
1 Channel
트랜지스터형
1 N-Channel
Pd 전력 손실
45 W
Id-연속-드레인-전류
6.7 A
Vds-드레인-소스-고장-전압
500 V
Rds-On-Drain-Source-Resistance
350 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
89 nC
Tags
SIHFIB1, SIHFIB, SIHFI, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.7A; Drain Source Voltage, Vds:500V; On Resistance, Rds(on):0.29ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHFIB16N50K-E3
DISTI # SIHFIB16N50K-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 6.7A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: SIHFIB16N50K-E3)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$2.9900
  • 2000:$2.8900
  • 4000:$2.7900
  • 6000:$2.6900
  • 10000:$2.5900
SIHFIB16N50K-E3
DISTI # 781-SIHFIB16N50K-E3		Vishay IntertechnologiesMOSFET 500V 6.7A 45W 350mohm @ 10V
RoHS: Compliant		0
  • 1000:$2.9300
영상 부분 # 설명
SIHFIB16N50K-E3

Mfr.#: SIHFIB16N50K-E3

OMO.#: OMO-SIHFIB16N50K-E3

 MOSFET 500V 6.7A 45W 350mohm @ 10V
SIHFIB16N50K-E3

Mfr.#: SIHFIB16N50K-E3

OMO.#: OMO-SIHFIB16N50K-E3-317

 RF Bipolar Transistors MOSFET 500V 6.7A 45W 350mohm @ 10V
SIHFIB11N50A

Mfr.#: SIHFIB11N50A

OMO.#: OMO-SIHFIB11N50A-1190

 신규 및 오리지널
SIHFIB11N50A,SIHFIB11N50

Mfr.#: SIHFIB11N50A,SIHFIB11N50

OMO.#: OMO-SIHFIB11N50A-SIHFIB11N50-1190

 신규 및 오리지널
SIHFIB11N50A-E3

Mfr.#: SIHFIB11N50A-E3

OMO.#: OMO-SIHFIB11N50A-E3-1190

 신규 및 오리지널
유효성
재고:
Available
주문 시:
4500
수량 입력:
SIHFIB16N50K-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$3.88
US$3.88
10
US$3.69
US$36.91
100
US$3.50
US$349.65
500
US$3.30
US$1 651.15
1000
US$3.11
US$3 108.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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