TGF2957

Mfr. #:: TGF2957
제조사:: Qorvo
설명:: RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2957 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TGF2957 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 18.2 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 32 V

Id - 연속 드레인 전류:: 820 mA

출력 파워:: 41.6 dBm

최대 드레인 게이트 전압:: 100 V

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 17 W

장착 스타일:: SMD/SMT

패키지/케이스:: 주사위

포장:: 젤팩

구성:: 하나의

동작 주파수:: 15 GHz

작동 온도 범위:: - 65 C to + 150 C

상표:: 코르보

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1112257

Tags: TGF295, TGF29, TGF2, TGF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2957 설명

***W: RF Power Transistor, DC to 12 GHz, 70 W, 19.2 dB, 32 V, GaN, DIE

TGF2957 추가 정보

TGF GaN on SiC Transistors: Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
1112250 DISTI # TGF2957	Qorvo	RF POWER TRANSISTOR RoHS: Compliant	0	1:$9.5500

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