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IXYX100N120C3

IXYX100N120C3
Mfr. #:
IXYX100N120C3
제조사:
Littelfuse
설명:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXYX100N120C3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYX100N120C3 DatasheetIXYX100N120C3 Datasheet (P4-P6)
ECAD Model:
추가 정보:
IXYX100N120C3 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247PLUS-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2.9 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
188 A
Pd - 전력 손실:
1150 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
IXYX100N120C3
포장:
튜브
연속 수집가 현재 IC 최대:
188 A
상표:
익시스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
30
하위 카테고리:
IGBT
상표명:
XPT
단위 무게:
1.340411 oz
Tags
IXYX10, IXYX1, IXYX, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) PLUS 247
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 188 A Through Hole High-Speed IGBT - ISOPLUS247
***el Electronic
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***DA Technology Co., Ltd.
Product Description Demo for Development.
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Trans IGBT Chip N-CH 1200V 200A 1250000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 200 A Flange Mount High-Speed IGBT - TO-247AD
***nell
IGBT, SINGLE, 1.2KV, 82A, TO-247AD; DC Collector Current: 82A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 1.25kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No.
***ark
Igbt, Npn, 1.2Kv, 82A, To-247Ad; Continuous Collector Current:82A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:1.25Kw; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes
***ical
Trans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD
***i-Key
IGBT 1200V 300W TO247AD
***trelec
IGBT, 1.2kV, 30A, TO-247AD
***ure Electronics
1200V,30A , TO-247
***el Nordic
Contact for details
***ure Electronics
IXGX Series 1200 Vce 240 A 40 ns t(on) A3-Class IGBT - PLUS247
***i-Key
IGBT 1200V 240A 830W PLUS247
***el Nordic
Contact for details
***ical
Trans IGBT Chip N-CH 1200V 160A 454000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT, Ultra Field Stop -1200V 40A
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ment14 APAC
IGBT, SINGLE, 1.2KV, 160A, TO-247-3
***ark
Igbt 1200V 40A Fs3 Solar/ups / Tube
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT, SINGLE, 1.2KV, 160A, TO-247-3; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 454W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 1200V 140A 556000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG7PH50UPBF Series 1200 V 140 A Insulated Gate Bipolar Transistor - TO-247AC
***ernational Rectifier
1200V Low VCEon Trench Discrete IGBT in a TO-247AD package
***nell
IGBT, 1200V, 140A, TO-247AC; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 556W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins
***ical
Trans IGBT Chip N-CH 1200V 160A 454000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
Motor Driver 1200 V 160 A Flange Mount Ultra Field Stop IGBT - TO-247-3
***emi
IGBT, Ultra Field stop - 1200V 40A, Low VCEsat
***nell
IGBT, SINGLE, 1.2KV, 160A, TO-247-3; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 454W; Collector Emitter Voltage V(br)ceo: 1.2k; Available until stocks are exhausted
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXYX100N120C3
DISTI # V36:1790_15876700		IXYS CorporationHIGH-SPEED IGBT0
    IXYX100N120C3
    DISTI # IXYX100N120C3-ND    		IXYS CorporationIGBT 1200V 188A 1150W PLUS247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		5In Stock
    • 510:$13.6568
    • 120:$16.0114
    • 30:$17.4243
    • 10:$18.8370
    • 1:$20.7200
    IXYX100N120C3
    DISTI # 747-IXYX100N120C3    		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant    		258
    • 1:$19.7300
    • 10:$17.9400
    • 25:$16.6000
    • 50:$15.6400
    • 100:$15.2500
    • 250:$13.9000
    • 500:$13.0100
    IXYX100N120C3
    DISTI # 8080225P    		IXYS CorporationIGBT N-CH 1200V 100A XPT GENX3 PLUS247, TU90
    • 90:£13.0200
    • 30:£13.7100
    • 10:£14.3000
    • 5:£14.9300
    영상 부분 # 설명
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    Mfr.#: IAUT300N08S5N012ATMA2

    OMO.#: OMO-IAUT300N08S5N012ATMA2

    		 MOSFET MOSFET_(75V,120V(
    FFSH15120A

    Mfr.#: FFSH15120A

    OMO.#: OMO-FFSH15120A

    		 Schottky Diodes & Rectifiers 1200V 15A SIC SBD
    UCC28C43QDRQ1

    Mfr.#: UCC28C43QDRQ1

    OMO.#: OMO-UCC28C43QDRQ1

    		 Switching Controllers BICMOS CURRENT MODE PWM CONTROLLER
    RT8522-20-3M0

    Mfr.#: RT8522-20-3M0

    OMO.#: OMO-RT8522-20-3M0

    		 Common Mode Chokes / Filters 20A 3mH 2-Wire Vert PCB Mounting
    CRM2512-FX-5R10ELF

    Mfr.#: CRM2512-FX-5R10ELF

    OMO.#: OMO-CRM2512-FX-5R10ELF-BOURNS

    		 Thick Film Resistors - SMD CHIP RESISTOR Low Value
    IAUT300N08S5N012ATMA2

    Mfr.#: IAUT300N08S5N012ATMA2

    OMO.#: OMO-IAUT300N08S5N012ATMA2-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 120V 8HSOF
    IXFX300N20X3

    Mfr.#: IXFX300N20X3

    OMO.#: OMO-IXFX300N20X3-IXYS-CORPORATION

    		 200V/300A ULTRA JUNCTION X3-CLAS
    IKQ75N120CH3XKSA1

    Mfr.#: IKQ75N120CH3XKSA1

    OMO.#: OMO-IKQ75N120CH3XKSA1-INFINEON-TECHNOLOGIES

    		 IGBT HS SW 1200V 75A TO-247-3
    유효성
    재고:
    192
    주문 시:
    2175
    수량 입력:
    IXYX100N120C3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$19.73
    US$19.73
    10
    US$17.94
    US$179.40
    25
    US$16.60
    US$415.00
    50
    US$15.64
    US$782.00
    100
    US$15.25
    US$1 525.00
    250
    US$13.90
    US$3 475.00
    500
    US$13.01
    US$6 505.00
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